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Microstructure and conduction behavior of BiFeO3 thin film deposited on Ge-doped ZnO

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Abstract

BiFeO3 (BFO) thin films were deposited on a Ge-doped ZnO (GZO)/Si(100) and a Pt(111)/Ti/SiO2/Si(100) using a pulsed laser deposition technique. An improved crystal growth property was observed for the BFO thin film deposited on the GZO/Si(100). The BFO thin film, which was deposited on the (00l) textured GZO/Si(100), exhibited preferred (l00) orientated grains, while randomly orientated grains were observed for the thin film deposited on the Pt(111)/Ti/SiO2/Si(100). When compared with the Pt/BFO/Pt capacitor, the GZO/BFO/GZO capacitor exhibited improved conduction behaviors, such as a low leakage current density and high stability against electrical breakdown. From the J–E curves, conduction of the GZO/BFO/GZO and the Pt/BFO/Pt capacitors was found to be dominated by Ohmic and space charge limited conductions at low and high electric field, respectively.

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Acknowledgements

This work was supported by the Priority Research Centers Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (2010–0029634).

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Authors and Affiliations

  1. Department of Physics, Changwon National University, Changwon, Gyeongnam, 51140, Republic of Korea

    Chinnambedu Murugesan Raghavan, Ji Ya Choi & Sang Su Kim

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  1. Chinnambedu Murugesan Raghavan
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  2. Ji Ya Choi
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  3. Sang Su Kim
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Correspondence to Sang Su Kim.

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Raghavan, C.M., Choi, J.Y. & Kim, S.S. Microstructure and conduction behavior of BiFeO3 thin film deposited on Ge-doped ZnO. Appl. Phys. A 123, 145 (2017). https://doi.org/10.1007/s00339-017-0773-0

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