Analytical Simulation of Spatial Distribution Lambertian Point-Source in LED Chip’s Epitaxial Layers

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Proceedings of the 7th International Conference on the Applications of Science and Mathematics 2021

Abstract

In this paper, the theoretical simulation of spatial distribution Lambertian point source is performed by considering the refractive index of different material used. The refractive index contributes in changing the spatial light intensity produced at air layer of LED chip. The system required sandwich design of LED chips epitaxial layer which consist of P and N type material. At the top of the chip, Indium tin oxide (ITO) as current spreading layer has been placed. The formulation of Snell’s law, total internal reflection and Lambertian emission function contributes to analyze the effect of different refractive index toward spatial light intensity produced at air layer. The change of the total internal reflection and spatial light intensity is analyzed which respect to the change of refractive index.

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Acknowledgements

This work was supported by the CAPTOR and Department of Physics, Kulliyyah of Science, International Islamic University Malaysia, and the Ministry of Education (Malaysia) through Fundamental Research Grant Scheme (Project No.: FRGS19-033-0641) (Reference No: FRGS/1/2018/TK07/UIAM/02/1)

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Correspondence to Ahmad Fakhrurrazi Ahmad Noorden .

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Abdul Hamid, A.N., Ahmad Noorden, A.F., Abdul Kadir, M.Z. (2022). Analytical Simulation of Spatial Distribution Lambertian Point-Source in LED Chip’s Epitaxial Layers. In: Mustapha, A.B., Shamsuddin, S., Zuhaib Haider Rizvi, S., Asman, S.B., Jamaian, S.S. (eds) Proceedings of the 7th International Conference on the Applications of Science and Mathematics 2021. Springer Proceedings in Physics, vol 273. Springer, Singapore. https://doi.org/10.1007/978-981-16-8903-1_3

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