Abstract
Wavefunctions and optical gain in a single In0.24Ga0.76N quantum well sandwiched between the GaN barriers has been reported. Optical gain within x-polarization and z-polarization have been investigated as quantum well width and external strain variations along [100]. The behavior of quasi Fermi levels for the valance bands and conduction bands have also been investigated. The InGaN/GaN type-I nano-heterostructure has been modeled and studied with the help of six band \( {\text{k}} \cdot {\text{p}} \) formalism. The \( 6\times 6 \) diagonalised \( {\text{k}} \cdot {\text{p}} \) Hamiltonian has been solved to evaluate the light and heavy hole energies. For an injected carrier density of 15 × 1012/cm2, the peak optical gain is found to be 15904/cm at wavelength of 0.48 µm in x-polarization and the peak optical gain is found to be 1576/cm at a wavelength of 0.44 µm in z-polarization.
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Acknowledgements
Authors are thankful to Manipal University Jaipur, 303007, Rajasthan, India for the financial support provided under the project Seed grant scheme: MUJ/REGR/1467/13. Authors also take this opportunity to thank Dr. Konstantin I. Kolokolov (Faculty of Physics, M V Lomonosov Moscow State University, Moscow 119991, Russia) for supporting the work. P. A. Alvi is also thankful to ‘‘Banasthali Center for Research & Education in Basic Sciences’’ under CURIE programme supported by the Dept. of Science & tech. (DST), Govt. of India, New-Delhi.
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Riyaj, M., Singh, A.K., Alvi, P.A., Rathi, A. (2020). Wavefunctions and Optical Gain in In0.24Ga0.76N/GaN Type-I Nano-heterostructure Under External Uniaxial Strain. In: Kalam, A., Niazi, K., Soni, A., Siddiqui, S., Mundra, A. (eds) Intelligent Computing Techniques for Smart Energy Systems. Lecture Notes in Electrical Engineering, vol 607. Springer, Singapore. https://doi.org/10.1007/978-981-15-0214-9_38
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DOI: https://doi.org/10.1007/978-981-15-0214-9_38
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