Abstract
An electronic system contains millions of components on a single chip today, and the failure of any of these components may lead to the system failure. Conventionally, the system reliability is ensured by having a high reliable subsystem or component, and thus efforts are placed to study the reliability of individual components in electronic system. However, the failure mechanisms of a system is lot more complex, and the correlation between the system failure and component failure is not straight forward, depending on the system configuration, as demonstrated in this work. Therefore, electronic system reliability may not be derived from its components’ reliability.
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References
P. D. T. O’Connor, D. Newton, and R. Bromley, Practical Reliability Engineering, Chichester: John Wiley & Sons Ltd, 2002.
L. Song, and T. Cher Ming, “Reliability Evaluation and Improvement for High Power LED Driver”, Presented in ICMAT 2013.
H. Chenming, C. T. Simon, H. Fu-Chieh et al., “Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement,” Solid-State Circuits, IEEE Journal of, vol. 20, no. 1, pp. 295–305, 1985.
J. E. Chung, P.-K. Ko, and C. Hu, “A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation,” IEEE Transactions on Electron Devices, vol. 38, no. 6, pp. 1362–1370, 1991.
M. Rausand, and A. Høyland, System reliability theory: models, statistical methods, and applications/ Marvin Rausand, Arnljot Høyland: Hoboken, NJ: Wiley-Interscience, c2004. 2nd ed., 2004.
S. Lan, C. M. Tan, and K. Wu, “Methodology of reliability enhancement for high power LED driver,” Microelectronics Reliability, vol. 54, no. 6–7, pp. 1150–9, 2014.
S. Lan, C. M. Tan, and K. Wu, “Reliability study of LED driver – A case study of black box testing,” Microelectronics Reliability, vol. 52, no. 9–10, pp. 1940–4, 2012.
D. S. Ang, and C. H. Ling, “On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress,” Microelectronics Reliability, vol. 39, no. 9, pp. 1311–1322, 1999.
K. M. Cham, J. Hui, P. Vande Voorde et al., “SELF-LIMITING BEHAVIOR OF HOT CARRIER DEGRADATION AND ITS IMPLICATION ON THE VALIDITY OF LIFETIME EXTRACTION BY ACCELERATED STRESS,” Annual Proceedings - Reliability Physics (Symposium). pp. 191–194, 1987.
D. S. Ang, and C. H. Ling, “Unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 149–159, 1998.
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Lan, S., Tan, C.M. (2017). The Correlation Between Device Aging and System Degradation. In: Tan, C., Goh, T. (eds) Theory and Practice of Quality and Reliability Engineering in Asia Industry. Springer, Singapore. https://doi.org/10.1007/978-981-10-3290-5_22
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DOI: https://doi.org/10.1007/978-981-10-3290-5_22
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