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3D passive microfluidic valves in silicon and glass using grayscale lithography and reactive ion etching transfer
A fabrication strategy for high-efficiency passive three-dimensional microfluidic valves with no mechanical parts fabricated in silicon and glass...
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Etching Technology
In semiconductor technology, different materials like silicon dioxide, silicon nitride, amorphous, polycrystalline and monocrystalline silicon,...
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Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode
Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire...
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Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
AbstractThe parameters of the gas phase and the kinetics of reactive ion etching of SiO 2 and Si 3 N 4 under conditions of an induction RF (13.56 MHz)...
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Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films
Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films...
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The Technology and Applications of RIE and DRIE Processes
The research progress of etching technology is closely related to modern processing technology and is inseparable from people’s lives. In recent...
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Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture
AbstractThe characteristics of the gas phase and the kinetics of reactive-ion etching of silicon in a 50% C 6 F 12 O + 50% Ar plasma are studied. The...
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Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio
During deep reactive ion etching (DRIE), microscale etch masks with small opening such as trenches or holes suffer from limited aspect ratio because...
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Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He Plasma
AbstractThe electrophysical parameters of plasma, concentrations of fluorine atoms, and kinetics of reactive-ion heterogeneous processes in the CF 4 ...
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Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
AbstractA comparative study of the electrophysical parameters of the plasma, the fluorine atom concentrations, and the kinetics of reactive-ion...
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Specific Features of Matching of a Lower Electrode and an RF Bias Generator for Reactive Ion Etching of Bulk Substrates
AbstractTheoretical and experimental results on reactive ion etching of bulk substrate in freon-14 with RF bias on the lower electrode are presented....
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Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3–Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions
In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers...
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Effect of Discharge Power in a Plasma during Reactive-Ion Etching of Massive Substrates on the Matching of the Lower Electrode with a High-Frequency Bias Generator
AbstractThe influence of the discharge power in plasma during the reactive-ion etching of massive substrates on the matching of the lower electrode...
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Effect of Helium Gas Addition to SF6/O2 Chemistry for SiC Dry Etching in AlGaN/GaN/SiC HEMTs
In this study, we present the experiment of the Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) technique for achieving high etch yield via...
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Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication
These days, the process of plasma etching is exhibited in various forms, including the reactive ion etching (RIE) method. Not only memory device but...
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Plasma Etch Equipment
This chapter begins with a brief overview of the plasma etching principle, equipment categorization, and their applications. A total of 11 typical...
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Nanoscale Etching of La0.7Sr0.3MnO3 Without Etch Lag Using Chlorine Based Inductively Coupled Plasma
La 0.7 Sr 0.3 MnO 3 (LSMO) has been considered as a promising material for future electronic and spintronic device application due to its unique...
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Etching characteristics of NF3 and F3NO at reactive ion etching plasma for silicon oxide and silicon nitride
Reactive ion etching of silicon oxide and silicon nitride was conducted by the injection of nitrogen trifluoride (NF 3 ) and nitrogen oxide trifluoride...
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Engineering high quality graphene superlattices via ion milled ultra-thin etching masks
Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned...
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Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures
AbstractA relief on the surface of GaN previously released from the growth substrate is formed by a combined method in which reactive ion etching is...
