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  1. Optical Analysis of Monolayers at Surfaces and Interfaces

    Surface as well as interface properties are crucial for tailoring advanced materials, especially if the structure size in one or more dimensions...
    Veit Wagner in Advances in Solid State Physics
    Chapter

  2. AlGaN/GaN Electrolyte-Gate Field-Effect Transistors as Transducers for Bioelectronic Devices

    AlGaN/GaN electrolyte gate field-effect transistors are assessed as a transducer device for biosensor applications. Their low-frequency noise power...
    Georg Steinhoff, Barbara Baur, ... Martin Eickhoff in Advances in Solid State Physics
    Chapter

  3. Thermodynamics – Past, Present and Future

    We begin with historical remarks on the basic contributions to thermodynamics and statistics with some bias to scientists working in Berlin as...
    Werner Ebeling in Advances in Solid State Physics
    Chapter

  4. Dynamical Variational Principles for Strongly Correlated Electron Systems

    The self-energy-functional approach (SFA) is discussed in the context of different variational principles for strongly correlated electron systems....
    Michael Potthoff in Advances in Solid State Physics
    Chapter

  5. Chemistry and Morphological Properties of Metal Interfaces to Organic Semiconductors

    Metal contacts to organic semiconductors play a decisive role for the performance of organic based devices such as organic light emitting diodes,...
    D.R.T. Zahn, G. Salvan, ... B.A. Paez in Advances in Solid State Physics
    Chapter

  6. Two-Gap Superconductivity in Magnesium Diboride

    It is by now generally accepted that the recently discovered superconductor MgB2 is a superconductor with two energy gaps. Here we discuss how this...
    Thomas Dahm in Advances in Solid State Physics
    Chapter

  7. Atomic-Scale Properties of High-k Dielectrics: Ab Initio Study for Pr-Based Materials

    We discuss the atomic and electronic structures and energetics of native point defects and of impurities (Si, Ti, B, moisture) in PrO1.5 and, to some...
    Jarek Da̧browski, Andrzej Fleszar, ... Peter Zaumseil in Advances in Solid State Physics
    Chapter

  8. Dynamics of Membranes: From Passive to Active Systems

    Fluid lipid membranes, which, together with filamentous proteins like actin, form the basic structural component of cells, have been a central topic...
    H.-G. Döbereiner, B.J. Dubin-Thaler, ... M.P. Sheetz in Advances in Solid State Physics
    Chapter

  9. Intrinsic Spin Hall Effect

    A brief review is given on a spin Hall effect, where an external electric field induces a transverse spin current. It has been recognized over 30...
    Shuichi Murakami in Advances in Solid State Physics
    Chapter

  10. Sol-Gel Approaches to Photonic Crystal Systems

    A prerequisite for an efficient ”molding the flow of light” by photonic crystals is the molding of materials in desired nanostructures. Very often,...
    Frank Marlow, Denan Konjhodzic, ... Hongliang Li in Advances in Solid State Physics
    Chapter

  11. Electron Spin Relaxation in Semiconductors

    We review recent progress in the understanding of electron spin relaxation mechanisms in zinc-blende semiconductors. Increased spin lifetimes are...
    Daniel Hägele, Stefanie Döhrmann, ... Michael Oestreich in Advances in Solid State Physics
    Chapter

  12. Growth and Magnetotransport Properties of Thin Co2MnGe Layered Structures

    Co2MnGe and other related Heusler alloys are investigated in the context of magnetotransport properties in multilayer (ML) structures. The most...
    Thomas Ambrose, Oleg Mryasov in Half-metallic Alloys
    Chapter

  13. Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films

    Ferroelectric rare-earth-doped Bi4Ti3O12 thin films have been successfully prepared on Si-based substrates by using metallo-organic precursor...
    Shin-ichi Hirano, Takashi Hayashi, ... Toshinobu Yogo in Ferroelectric Thin Films
    Chapter

  14. Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B-Site Ions in Perovskites

    We have developed a new superlattice technique to artificially control the B-site ordering state. The technique has been applied to Ba(Zr0.2Ti0.8)O3,...
    Hitoshi Tabata in Ferroelectric Thin Films
    Chapter

  15. Pb-Based Ferroelectric Thin Films Prepared by MOCVD

    This Chapter focuses on the preparation and ferroelectric properties of Pb-based thin films and nanostructures. First, the growth behavior of...
    Masaru Shimizu, Hironori Fujisawa, Hirohiko Niu in Ferroelectric Thin Films
    Chapter

  16. The Sputtering Technique

    In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
    Koukou Suu in Ferroelectric Random Access Memories
    Chapter

  17. Novel Si-Substituted Ferroelectric Films

    In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
    Takeshi Kijima, Hiroshi Ishiwara in Ferroelectric Random Access Memories
    Chapter

  18. Overview

    A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
    James F. Scott in Ferroelectric Random Access Memories
    Chapter

  19. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
    Hiromitsu Hada, Kazushi Amanuma, ... Takemitsu Kunio in Ferroelectric Random Access Memories
    Chapter

  20. The Application of FeRAM to Future Information Technology World

    The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
    Shoichi Masui, Shunsuke Fueki, ... Shoichiro Kawashima in Ferroelectric Random Access Memories
    Chapter
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