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Changes in Structure of Subthreshold Discharge in Air Occurring with Decreasing Microwave Radiation Intensity
AbstractAt microwave beam intensities in the range of 3.3–4.8 kW/cm 2 , changes in the characteristics were recorded of the subthreshold...
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Subthreshold Discharge in a Microwave Beam as the Basis of a Plasmachemical Reactor for Cleaning Urban Air from Excess Hydrogen Sulfide
AbstractThe subthreshold self-non-self-sustained discharge in air was studied as the basis of the system for cleaning urban air from ecologically...
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The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
AbstractThe dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with...
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QFT approach to dressed particle processes in preheating and non-perturbative mechanism in kinematically-forbidden regime
We provide a quantum-field theoretic formulation of dressed particle dynamics that systematically includes particle production and scattering/decay...
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Parameters of a Subthreshold Microwave Discharge in Air and Carbon Dioxide as a Function of Microwave Field at Different Gas Pressures
AbstractPropagation velocity of a subthreshold microwave discharge in air and carbon dioxide is measured at various gas pressures and intensities of...
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Synthesis of Nitrogen Oxides in a Subthreshold Microwave Discharge in Air and in Air Mixtures with Methane
Abstract—A subthreshold discharge excited by a microwave beam in air at pressures close to atmospheric is studied as a plasmachemical method of...
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Noise-induced dynamics of coupled excitable systems with slow positive feedback
In excitable systems, superthreshold stimuli can cause strong responses—events. Event generation is often modulated by slow feedback processes. The...
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Undoped p-type ZnTe thin film and thin film transistor channel performance
In this study, the p-type Zinc Telluride (ZnTe) thin films were deposited by RF magnetron sputtering technique on the patterned-ITO substrates. The...
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Temperature analysis of Si0.55Ge0.45 sourced nanowire tunnel field-effect transistor based on charge plasma and gate stack
In this paper, conventional charge-plasma nanowire tunnel field-effect transistor (CP-NWTFET) has been applied by gate stacking and SiGe sourced to...
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Investigation of N + SiGe juntionless vertical TFET with gate stack for gas sensing application
In this work, a novel N + SiGe delta-doped gate stacked junctionless vertical tunnel field transistor (N + SiGe gate staked JL-VTFET) is proposed and...
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Design and characterization of Schottky barrier double gate based p-IMOS
In this paper, a Schottky barrier double gate impact ionization metal oxide semiconductor (SBDG-IMOS) transistor with reduced subthreshold swing...
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Comparative performance investigation of silicon and germanium junctionless VSTB FET including architectural stress–strain influence
The main object of this article is to expand the knowledge about a newly invented MOS device called vertical super-thin body (VSTB) FET...
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Low-Frequency Microwave Response of a Quantum Point Contact
The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the...
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Experimental Nuclear Astrophysics
This contribution describes the experimental challenges to investigate nuclear reaction cross sections for stellar burning processes in the...
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Experimental Nuclear Astrophysics
This contribution describes the experimental challenges to investigate nuclear reaction cross sections for stellar burning processes in the...
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TCAD simulation study on reliability issue of heterojunction heterodielectric FinFET: Effect of interface trap charge, BOX height and temperature
In this paper, a heterojunction FinFET on heterodielectric BOX is proposed and this device is named as heterojunction heterodielctric BOX (HJHDB)...
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Impact of Pocket Doped Mg2Si/Si Heterojunction Ge Gated TFET for Low Optical Power Detection at 1550 nm
In this article, Germanium photogated Tunnel Field effect transistor with Magnesium Silicide (Mg2Si)/Silicon (Si) heterojunction and its advancement...
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Hot carrier reliability assessment of vacuum gate dielectric trench MOSFET (TG-VacuFET)
The manuscript proposes a Vacuum Gate Dielectric Trench MOSFET (TG-VacuFET) to attribute the reliability performances in hot-carrier and radiation...
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Structure of Axial Modes of a Diode Laser with an External Cavity Containing a Volume Phase Grating
AbstractBased on the technique using translation matrices, the complex frequencies of the axial modes of a diode laser with an external cavity...
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Impact of trap charge and temperature on DC and Analog/RF performances of hetero structure overlapped PNPN tunnel FET
Impact of interface trap charges (ITCs) as well as temperature on the performance of a proposed dual dielectric constant spacer source/drain,...
