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Effect of ITO/SiO2 double-layer film thickness on the optoelectronic performance of metal-doped ITO near-UV LED
In order to optimize the optoelectronic performance based on metal-doped ITO LED, the effect of the thickness of the ITO/SiO 2 double-layer film in...
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Structural and Magnetization Studies of Cu Buffered Fe-Ga Films Grown on Si and Si/SiO2 Substrates
In this paper, we report a systematic study on effect of film thickness and substrate temperature on structural and magnetic behaviour of Fe-Ga films...
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Impact of TiO2 buffer layer on the ferroelectric photovoltaic response of CSD grown PZT thick films
Chemical solution deposition technique has been utilized to grow polycrystalline PZT thick films on Pt/Ti/SiO 2 /Si and TiO 2 -buffered Pt/Ti/SiO 2 /Si...
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Dependence of the Electrochemical Parameters of Composite SiO/C Anodes for Lithium-Ion Batteries on the Composition and Synthesis Temperature
AbstractThe results of a study of anodes obtained by carbonization of silicon monoxide by means of a reaction with solid-phase fluorocarbon CF 0.8 ...
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Annealing Effects on the Magnetic Properties of SiO/IrMn/Co(10)/Cu(X)/Co(2)/Py(8)/Pt Multilayered Films
In this work, the magnetic properties of Co(10 nm)/Cu(X nm)/Co(2 nm)/Py(8 nm)/Pt magnetic–nonmagnetic multilayered thin film grown on an...
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Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition
AbstractGe/Si layers are formed on Si/SiO 2 /Si(100) substrates and are investigated for different growth temperatures. The Si layer is grown by...
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Designing a compact photonic crystal decoder using graphene-SiO2 stack
In this study, a novel approach is described for develo** an electro-optic decoder utilizing a combination of photonic crystals and a graphene...
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Parametric study on the bimetallic cladding silica waveguide surface plasmon resonance sensor
Surface plasmon resonance (SPR) is available for measurement of liquid refractive index. Compared with near-infrared bands, the absorption...
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Synthesis of novel CaF2 − CaO − Na2O − B2O3−SiO2 bioglass system: phase transformation, surface reaction and mechanical properties
This research aims to investigate the potential of novel CaF 2 − CaO − Na 2 O − B 2 O 3 −SiO 2 glass systems and converted to bioactive glass-ceramics. The...
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Integrated RF Electronics on the AlN Platform
Recently, both n- and p- channel radio-frequency (RF) transistors with record performance have been demonstrated on AlN buffer layer based...
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Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates
AbstractA new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon...
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Rare Earth Oxides in Microelectronics
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits has been conducted. Rare earth oxides have...
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Applications of Raman, IR, and CL Spectroscopy
This chapter describes the latest analysis examples, combing Raman, IR, and CL spectroscopy. Strained Si techniques, such as incorporating SiGe is...
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Improved Performance of Organic Star-Shaped Molecule Solar Cells with SiO2 Nanoparticles Embedded in a Buffer Layer
AbstractWe have studied the effect of spherical SiO 2 nanoparticles with sizes of 20, 50, and 80 nm embedded in a PEDOT : PSS buffer layer on the...
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AlN/GaN/AlN High Electron Mobility Transistors
GaN-based high-electron mobility transistors (HEMTs) based power amplifiers (PA) have enjoyed commercial success in the microwave frequency spectrum...
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A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films
AbstractIn the article, using the example of growing aluminum nitride (AlN) on (110) orientation silicon (Si) with a silicon carbide (SiC) buffer...
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The Magneto-Optical Voigt Parameter from Magneto-Optical Ellipsometry Data for Multilayer Samples with Single Ferromagnetic Layer
AbstractCalculations of the magneto-optical Voigt parameter Q were carried out using various models of reflecting media for thin films Fe|SiO 2 |Si(100...
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Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide
In this study, we report a substantial improvement in the long-term stability of low-temperature polycrystalline silicon (LTPS) thin-film transistors...
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Epitaxial Growth of AlN-Based Heterostructures for Electronics
The aluminum nitride (AlN) platform is positioned to be a top contender for the next-generation of communication systems, by enabling integration of...
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Applications of Emerging Materials: High Power Devices
SiC power MOSFETs, AlGaN/GaN-HEMTs (High Electron Mobility Transistors), AlGaN/GaN-MOSHEMTs and β-Ga2O3 MOSFETs have become the most attractive...