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Preparation of large Cu₃Sn single crystal by Czochralski method

Cu ₃Sn was recently predicted to host topological Dirac fermions, but related research is still in its infancy. The growth of large and high-quality Cu

Minsik Kong, Sang-Eon Park, ... Jong Mok Ok in Journal of the Korean Physical Society

Article 22 August 2022

Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method

Abstract

Facets are formed at the periphery of the conical part of GaAs single crystals grown by the Czochralski method when the melt is supercooled...

T. G. Yugova, S. N. Knyazev, O. S. Pavlova in Crystallography Reports

Article 24 May 2022

Polycrystallinity in Gallium Arsenide Crystals Grown by the Czochralski Method

Abstract

The specific features of the formation of crystallites in gallium arsenide crystals grown by the Czochralski method have been investigated....

O. S. Pavlova, T. G. Yugova, S. N. Knyazev in Crystallography Reports

Article 01 November 2021

Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method

Abstract—

Indium arsenide (InAs) single crystals heavily doped with Sn are found to have various violations of structural perfection, which depend on...

N. A. Sanjarovskii, I. B. Parfenteva, ... S. N. Knyazev in Crystallography Reports

Article 01 December 2022

Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates

MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180...

Milou van Rijnbach, Dumitru Vlad Berlea, ... Abdelhak M. Zoubir in The European Physical Journal C

Article Open access 10 March 2024

Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method

Abstract

The effect of a traveling magnetic field on the parameters of Te-doped GaAs single crystals in the carrier density range of 5 × 10 ¹⁷–2 × 10 ¹⁸cm...

T. G. Yugova, V. A. Chuprakov, ... S. N. Knyazev in Crystallography Reports

Article 01 December 2022

Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method

Abstract

The structural features induced by twinning in tin- and tellurium-doped gallium arsenide crystals during their growth by the Czochralski...

A. A. Yugov, B. V. Pugachev, ... S. N. Knyazev in Crystallography Reports

Article 20 November 2020

Volume Gallium Oxide Crystals Grown from Melt by the Czochralski Method in an Oxygen-Containing Atmosphere

Abstract

Results of successful experiments on the growth of gallium oxide (β-Ga ₂O ₃) crystals by the Czochralski method are reported. The influence of...

D. A. Zakgeim, D. I. Panov, ... V. E. Bougrov in Technical Physics Letters

Article 01 November 2020

Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells

The relationship of free surface area with temperature, power, and oxygen concentration in a silicon ingot grown by Czochralski method for solar...

Jun-Seong Park, Tae-Hun Shim, Jea-Gun Park in Journal of the Korean Physical Society

Article 20 November 2020

Elemental and Structural Map** of Czochralski-Grown Bulk (Al_xGa_{1 –} _x)₂O₃ Crystals

Abstract

The aluminum distribution in the surface layer of an (Al _xGa _{1 –} _x) ₂O ₃crystal grown on a sapphire seed by the Czochralski method has been...

D. A. Bauman, L. A. P’yankova, ... V. E. Bugrov in Technical Physics Letters

Article 01 March 2021

Comprehensive understanding on germanium-do** effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal

The effects of germanium (Ge)-do** with concentrations in the range of 10 ¹⁸–10 ²⁰ cm ⁻³on oxygen precipitation (OP) in Czochralski (CZ) silicon...

Wu Lan, Tong Zhao, ... **angyang Ma in Applied Physics A

Article 01 November 2021

Scintillation Properties of New Ultrafast YAG:Yb³⁺:Ca²⁺ and YAG:Yb³⁺:Ca²⁺:Si⁴⁺ Crystals

Abstract

For the first time, new YAG:Yb:Ca and YAG:Yb:Ca:Si crystals with ultrafast scintillation time are grown. The crystals are grown by the...

M. V. Belov, Yu. D. Zavartsev, ... V. S. Tskhay in Bulletin of the Lebedev Physics Institute

Article 01 November 2023

Effect of Zr⁴⁺ concentration on optical properties and defect structure of Zr:Ho:LiNbO₃ crystals

Zr:Ho:LiNbO ₃ crystals with different concentrations of Zr ⁴⁺were prepared by Czochralski method. The internal structure changes and the occupancy of...

Li Dai, Shuo Shi, ... **anbiao Li in The European Physical Journal D

Article 02 April 2024

Scintillation Lu₂SiO_{5 ‒ z}:Y³⁺:Ce³⁺:Ca²⁺ Crystal for Positron Emission Tomography

Abstract

Highly efficient scintillation Lu ₂SiO _{5 ‒} _z:Y ³⁺:Ce ³⁺:Ca ²⁺crystals are grown from 20 to 85% of the initial melt using the Czochralski method....

I. M. Ermochenkov, Yu. D. Zavartsev, ... D. V. Serebryakov in Bulletin of the Lebedev Physics Institute

Article 01 January 2024

Obtaining and studying photorefractive and optical properties of lithium niobate single crystal co-doped with gadolinium and boron

A technological scheme has been developed for producing a uniform single-phase LiNbO ₃:Gd:B charge of a given composition. The charge is necessary to...

S. M. Masloboeva, I. V. Biryukova, ... M. N. Palatnikov in Optical and Quantum Electronics

Article 29 March 2024

7.25 W LD side-pumped Er:YGG CW laser operated at 2.8 μm

An Er:Y ₃Ga ₅O ₁₂ crystal doped with 30 at% Er ³⁺was grown by the Czochralski method. The crystal structure and component, thermal and spectroscopic...

Cong Quan, Dunlu Sun, ... Qingli Zhang in Applied Physics B

Article 02 November 2023