Search
Search Results
-
InSe/CrSe Interfaces Performed as Resistive Switches and Band Filters for Gigahertz/Terahertz Communication Technology Applications
Herein chromium selenide (n-CrSe) nanosheets are deposited onto amorphous indium selenide (n-InSe) thin films by the thermal evaporation technique...
-
Spin-orbit coupled spin-polarised hole gas at the CrSe2-terminated surface of AgCrSe2
In half-metallic systems, electronic conduction is mediated by a single spin species, offering enormous potential for spintronic devices. Here, using...
-
Growth and characterization of chromium selenide thin films for optoelectronic applications
Herein amorphous and stoichiometric CrSe 2 thin films are obtained by the thermal deposition (TD) technique under a vacuum pressure of 10 −5 mbar. The...
-
Strain-induced electronic, optical and thermoelectric properties of SiC-CrX2(X = S, Se) heterostructures
Combining DFT-based calculations with Boltzman transport formalism, thermoelectric transport properties of semiconducting two-dimensional SiC-CrS 2 ...
-
Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions
Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic...
-
Room temperature magnetocaloric effect in CrTe1−xSex alloys
In this work, we report room temperature magnetocaloric properties in CrTe 1− x Se x (0.00 ≤ x ≤ 0.10) alloys prepared by a conventional solid-state...
-
Generation and Enhancement of Valley Polarization in Monolayer Chromium Dichalcogenides
Valleytronic properties of monolayer transition metal dichalcogenides have attracted extensive attention owing to its intriguing fundamental physics...
-
-
Half-Metallic and Half-Semiconductor Gaps in Cr-Based Chalcogenides: DFT + U Calculations
Using full-potential linear-augmented plane waves plus local orbitals (FP-LAPW) method, within the generalized gradient approximation (GGA) and GGA + U ...
-
Efficient Spin Generation in Graphene by Magnetic Proximity Effect Upon Absorption of Far-IR Radiation
AbstractThe magnetic proximity effect is significant for atomically thin layers of two-dimensional materials. In this paper, we study the mechanisms...
-
Exploring the physical properties of Co2MnSi full Heusler alloy: a first principles study
Half-metallic ferromagnetic Heusler alloys attracted much attention in the last few decades due to their significant physical properties as well as...
-
Synthesis and characterization of CrSe thin film produced via chemical bath deposition
Chromium selenide (CrSe) crystalline thin film has been produced via chemical bath deposition on substrates (commercial glass). Transmittance,...
-
Laser Synthesis of Nanopowders Based on Zinc Selenide for Production of Highly Transparent Ceramics
AbstractWeakly agglomerated ZnSe, Cu:ZnSe, and Fe:ZnSe nanopowders have been obtained by evaporating a target of the corresponding chemical...
-
Diverse magnetism in stable and metastable structures of CrTe
In this paper, we systematically investigated the structural and magnetic properties of CrTe by combining particle swarm optimization algorithm and...
-
The Layer-Inserting Growth of Antiferromagnetic Topological Insulator MnBi2Te4 Based on Symmetry and Its X-ray Photoelectron Spectroscopy
The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property make it a...
-
Layer-dependent magnetic phase diagram in FenGeTe2 (3 ≤ n ≤ 7) ultrathin films
Two-dimensional (2D) ferromagnets with high Curie temperature T C are desirable for spintronics applications. However, they are rarely obtained in...
-
Forming the Fe(Se1 –xTex) Superconducting Coatings on the Iron Surface
AbstractThe Fe(Se 1 – x Te x ) superconducting coatings have been deposited onto the surface of strip and ribbon iron substrates from chalcogen vapors...
-
Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides: Three strategies
Two-dimensional (2D) semiconductors are emerging as promising candidates for the next-generation nanoelectronics. As a type of unique channel...
-
Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect
Two heterostructures consisting of a Bi 2 Se 3 topological insulator substrate and a CrI 3 or CrBi 2 Se 4 ferromagnetic insulator thin film have been...
-
Characterizations on Crystalline Structures and Defect Distributions
The crystalline structural quality of the grown crystals were examined by synchrotron white beam X-ray topography (SWBXT), high resolution triple...