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Bismuth-Doped Phosphate Glasses and H+-Implanted Waveguides
The work reports on the preparation and optical characterization of 75P 2 O 5 -15B 2 O 3 -9Al 2 O 3 -Bi 2 O 3 glass by using the melt-quenching method and...
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Optical Planar Waveguides Fabricated by Using Carbon Ion Implantation in Terbium Gallium Garnet
Optical planar waveguides in terbium-gallium-garnet (TGG) crystals are promising photonic devices, particularly for optical isolators and rotators....
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Optical properties of K9 glass waveguides fabricated by using carbon-ion implantation
K9 glass is a material with promising properties that make it attractive for optical devices. Ion implantation is a powerful technique to form...
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Effect of helium implantation on mechanical properties of niobium doped tungsten
Helium atoms were implanted into niobium-doped tungsten and pure tungsten via ion implantation, and the effect of helium implantation on mechanical...
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Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation
Thermally grown amorphous SiO 2 (a-SiO 2 ) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0×10 17 ions/cm 2 . These samples were...
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Swift heavy ion irradiation induced modification of BiFeO3 thin films prepared by sol-gel method
We report the preparation of multiferroic BiFeO 3 thin films on ITO coated glass substrates through sol-gel spin coating method followed by thermal...
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Observation of grain growth in swift heavy ion irradiated NiO thin films
NiO thin films grown on Si(100) substrates by electron beam evaporation, were sintered at 500 °C and 700 °C. The films were irradiated with 120 MeV Au
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Surface modifications of ultra-thin gold films by swift heavy ion irradiation
Gold films of thickness 10 and 20 nm grown on float glass substrate by thermal evaporation technique were irradiated with 107 MeV Ag 8+ and 58 MeV Ni 5+ ...
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Studies on ion-beam modifications of ADP and KDP crystal surfaces
Experimental investigations on He + ion (150 keV) beam modifications of the (100) surfaces of ADP and KDP single crystals, relative to asgrown...
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Structure and properties of optical waveguides in stoichiometric LiNbO3 crystals
The structures of proton-exchanged and implanted waveguides are studied by X diffraction analysis and vibration spectroscopy. On the basis of the...
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Effect of 100 MeV O7+ ions irradiation on ethanol sensing response of nanostructures of ZnO and SnO2
Tin dioxide nanoparticles and zinc oxide nanorods were synthesized chemically and thick film gas sensors on alumina substrates were fabricated of...
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AC electrical properties of proton irradiated EVA films
MeV ions passing through polymeric films modify their electrical, optical and thermal properties and these changes are related to changes in the...
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Elastic atomic displacements and color center creation in LiF crystals irradiated with 3-, 9- and 12-MeV Au ions
Creation of color centers in LiF under irradiation with 3–12-MeV Au ions was studied. Comparison of experimental data of color center creation with...
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Oxygen (O6+) ion beam irradiation effects on etching parameter in lexan polymeric track detector
The polymer Lexan was irradiated to 80MeV O 6+ ion beam using the 15UD pelletron at Inter University Accelerator Centre, New Delhi. The ion fluence...
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Different shapes of tracks in phlogopite, biotite and soda lime glass
Etched track opening geometries in Biotite, Phlogopite and soda-lime glass irradiated with swift heavy ions [ 197 Au(11.64 MeV/n), 136 Xe(11.56 MeV/n), 58 ...
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Study of interface mixing induced by Ar+ ion irradiation on Ag–Ge bilayer system
A 400 keV 40 Ar + ion beam was utilized to induce mixing between two thin layers of Ag and Ge. Rutherford Backscattering Spectrometry and Electrical...
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Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN
A method of statistical calculation of parameters of averaged individual collision cascades formed by cluster ions composed of a small number of...
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Electron spin resonance and photoluminescence in pyrolytic silicon nitride films irradiated with argon and molecular ions
The photoluminescence and electron spin resonance phenomena are studied at room temperature for pyrolytic silicon nitride films irradiated with argon...
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Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions
Silicon films with a low defect concentration have been formed on a sapphire substrate using the process of solid-phase recrystallization. The method...
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Electrical properties of Zinc-Tin diarsenide (ZnSnAs2) irradiated with H+ ions
The results of studying the electrical properties and isochronous annealing of p -ZnSnAs 2 irradiated with H + ions (energy E = 5 MeV, dose D = 2 × 10 16 ...