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4 × 4 Transfer Matrix T p for Dielectric Homogeneous Films
The matrix Δ in (A.5) does not depend on z if the medium is homogeneous, i.e., ɛ is not a function of z. The solution of (A.2) for a layer with...
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Introduction
Quantitative information on the penetration of swift ions through matter, in particular the systematics of energy loss, is of considerable interest...
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4 × 4 Transfer Matrix T p for Magneto-optic Films
Consider homogeneous mediums with non-symmetric dielectric properties, i.e., materials where ɛij≠ ɛij. Examples are magnetized materials with...
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Magneto-Optic Ellipsometry
The free-charge-carrier properties effective mass m, mobility μ, and carrier concentration N are of fundamental importance for understanding basic...
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Electron Coherence in Mesoscopic Kondo Wires
We present measurements of the magnetoresistance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities. The...
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Turbulence
Recent progress in the physics of developed turbulence is presented. After summarizing the relevant notions as the Reynolds number Re and the...
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LDA+DMFT Investigations of Transition Metal Oxides and f-Electron Materials
In the last few years LDA+DMFT, the merger of conventional band structure theory in the local density approximation (LDA) with the many-body...
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New Developments with Magnetic Tunnel Junctions
Besides sensors, magnetic random access memory (MRAM) and hard disk read heads, much more possible applications are still ahead for the new...
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Stress, Strain and Magnetic Anisotropy: All Is Different in Nanometer Thin Films
The application of the crystal curvature technique for stress measurements at surfaces and in films is presented. Important aspects regarding sample...
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Spin-Galvanic Effect and Spin Orientation Induced Circular Photogalvanic Effect in Quantum Well Structures
The spin-galvanic effect and the spin polarization induced circular photogalvanic effect generated by homogeneous optical excitation with circularly...
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Magnetisation Reversal of Stripe Arrays -- Comparison of MOKE with Polarized Neutron Reflectivity
Laterally structured magnetic films will be important components of future magnetic storage elements. From the aspect of application, remagnetization...
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Nanoscopic Quantum Rings: A New Perspective
With rapid advances in fabrication of nano-scale devices, quantum rings of nanometer dimensions that are disorder free and contain only a few...
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Non-contact Measurement of Thin-Film Conductivity by IR Spectroscopy
Charge transport in metal thin films depends on the electronic structure of the metal, the mesoscopic morphology of the films, and on the microscopic...
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Magnetic Orientation in Birds and Other Animals
The use of the geomagnetic field for compass orientation is widespread among animals, with two types of magnetic compass mechanisms described: an...
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Self-Organized InGaAs Quantum Rings -- Fabrication and Spectroscopy
We report on recent experiments on semiconductor quantum rings, fabricated by self-organized Stranski-Krastanov growth. In the first part of this...
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Graphite as a Highly Correlated Electron Liquid
Although a considerable amount of research work has been done on graphite, its physical properties are still not well understood. In the present...
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Silicon-Based Waveguide Technology for Wavelength Division Multiplexing
This chapter reviews the application of silicon-based planar waveguide components for wavelength division multiplexing (WDM) and demultiplexing. The...
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3.8.10 Chemisorption of polyatomic chain-like hydrocarbons on metals and semiconductors
This document is part of Part 4 'Adsorbate Species on Surfaces and Adsorbate-Induced Surface Core Level Shifts' of Subvolume A 'Adsorbate Layers on...
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Charge Traps in High-k Dielectrics: Ab Initio Study of Defects in Pr-Based Materials
In the nearest future, a dielectric with a dielectric constant k several times higher than that of SiO2 will be needed for the fabrication of CMOS...
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Strain-Relief at Internal Dielectric Interfaces in High-k Gate Stacks with Transition Metal and Rare Earth Atom Oxide Dielectrics
This Chapter addresses the effects of bonding discontinuities at the internal dielectric interfaces in gate stacks that include transition metal and...