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Ag-GST/HfOx-based unidirectional threshold switching selector with low leakage current and threshold voltage distribution for high-density cross-point arrays
AbstractThe use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to...
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Disclosing the basis of the ratio of the firing voltage to the threshold voltage in Ovonic Threshold Switching selectors: Urbach energy
Ovonic Threshold Switching (OTS) selectors match the phase-change memory (PCM) scaling in physical and electrical properties, showing the great...
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Fully printed IGZO memristor arrays with robust threshold switching characteristics for artificial nociceptors
The large-scale fabrication and patterning of artificial perceptual systems are vital for the development of bionic systems. Traditional patterning...
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Leakage Threshold of a Saddle Point
The threshold condition for leakage inception is of great interest to many engineering applications, and it is essential for seal design. In the...
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Contamination Threshold Values for Textile Recycling
Post-consumer textile recycling promises to reduce the amount of textile waste deposed at landfills and incinerated as thermal recycling. It can...
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Design of low-threshold photonic-crystal surface-emitting lasers with confined gain regions by using selective area intermixing
Photonic-crystal surface-emitting lasers have many promising properties over traditional semiconductor lasers and are regarded as the next-generation...
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Low-threshold upconversion plasmonic lasers based on CsPbBr3 nanoplates
Upconversion lasers offer a robust platform for the new generation of highly integrated nonlinear optoelectronic applications. They are central in...
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On the optical tuning of the threshold voltage for DPPDTT-based organic field effect transistors
Understanding the threshold voltage tuning in photosensitive organic field effect transistors (OFETs) is crucial for many device applications like...
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Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte
The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their...
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Recent Advances in Gate Dielectrics for Enhanced Leakage Current Management and Device Performance
Gate oxide in metal oxide semiconductor field effect transistor (MOSFET) or gate dielectric layer in thin film transistor (TFT) plays an important...
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Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor
As an important receptor located in the skin, a nociceptor is capable of detecting noxious stimuli and sending warning signals to the central nervous...
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Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
Due to the enhanced-mode (E-mode) operation, AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered to be safer for circuit operation....
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In silico screening for As/Se-free ovonic threshold switching materials
Restricted use of hazardous environmental chemicals is one important challenge that the semiconductor industry needs to face to improve its...
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Novel applications of ZnTe as an ovonic threshold switching and as a phase change material
Observation of ovonic threshold switching (OTS) behavior in ZnTe attracted attention to this material as a replacement to GeAsSeTe alloy currently...
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Fabrication and Characteristics of a Zinc Oxide Tunnel Effect Transistor with High Current Output
A zinc oxide (ZnO)/silver double Schottky junction tunnel effect transistor was fabricated by radio frequency magnetron sputtering. ZnO was used as...
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Physics-Based Modeling and Experimental Study of Conductivity and Percolation Threshold in Carbon Black Polymer Nanocomposites
We present a physical model for the effective electrical conductivity and the associated percolation behavior in CB-based polymer nanocomposites...
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Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Do**-Free GaN Cap
GaN-based enhancement-mode high-electron-mobility transistors (HEMTs) with a 25-nm-thick undoped GaN (u-GaN) cap underneath the gate metallization on...
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OFF Current Reduction in Negative Capacitance Heterojunction TFET
A double-gate heterojunction negative-capacitance tunnel field-effect transistor is proposed for OFF-current reduction with the help of a...
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Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate
The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates....
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Rapid formation of carbon nanotubes–natural rubber films cured with glutaraldehyde for reducing percolation threshold concentration
Carbon nanotubes (CNTs) filled natural rubber (NR) composites with various CNT contents at 0, 1, 2, 3, 4 and 5 phr were prepared by latex mixing...
