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Development of excitation power-responsive anti-stokes emission wavelength switching and their energy saving induced by localized surface plasmon resonance
We designed an external stimulus-responsive anti-Stokes emission switching using dual-annihilator-based triplet–triplet annihilation upconversion...
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Disclosing the basis of the ratio of the firing voltage to the threshold voltage in Ovonic Threshold Switching selectors: Urbach energy
Ovonic Threshold Switching (OTS) selectors match the phase-change memory (PCM) scaling in physical and electrical properties, showing the great...
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The method of reducing the CMOS inverter switching energy
In CMOS inverters, the main part of the power supply is spent on charging the parasitic capacitance of the transistor gates and the load capacitance....
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Rotational magnetoelectric switching in orthorhombic multiferroics
Controlling the direction of ferromagnetism and antiferromagnetism by an electric field in single-phase multiferroics will open the door to the next...
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Engineering interfacial polarization switching in van der Waals multilayers
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it...
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Observation of nonvolatile magneto-thermal switching in superconductors
Applying a magnetic field to a solid changes its thermal-transport properties. Although such magneto-thermal-transport phenomena are usually small...
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Controllable volatile-to-nonvolatile memristive switching in single-crystal lead-free double perovskite with ultralow switching electric field
All-inorganic lead-free double perovskite offers a potential material platform for electronic or optoelectronic memory devices owing to its ionic...
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Theoretical and Numerical Modeling of Optical Switching of Epitaxial Nanostructures Based on Iron-Garnet Films
AbstractThe paper presents a theoretical analysis of magnetization switching in a gadolinium ferrite garnet film due to the demagnetizing effect of a...
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Fully printed IGZO memristor arrays with robust threshold switching characteristics for artificial nociceptors
The large-scale fabrication and patterning of artificial perceptual systems are vital for the development of bionic systems. Traditional patterning...
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Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing
Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for...
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Electrical switching of the edge current chirality in quantum anomalous Hall insulators
A quantum anomalous Hall (QAH) insulator is a topological phase in which the interior is insulating but electrical current flows along the edges of...
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Tunable electrode-dependent switching characteristics of Se-Te-In chalcogenide thin films
Chalcogenide glasses have garnered significant interest as potential materials for the creation of high-density, three-dimensional stackable...
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All-optical switching of magnetization in atomically thin CrI3
Control of magnetism has attracted interest in achieving low-power and high-speed applications such as magnetic data storage and spintronic devices....
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Memristive switching in two-dimensional BiSe crystals
In spite of the explosive rise of research on memristive switching, more improvements in tunability, versatility, and heterointegration are required...
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Do** induced enhancement of resistive switching responses in ZnO for neuromorphic computing
We examine the morphological, magnetic and resistive switching characteristics of ZnO co-doped with both cobalt (Co) and gadolinium (Gd) for the...
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Bi-polar switching properties of FTO/CZTS/Ag device
Copper Zinc Tin Sulfide (CZTS) is a well-known kesterite material having a variety of optoelectronic applications. The constituent elements are earth...
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Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO 2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and...
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The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization
The discovery of efficient magnetization switching upon device activation by spin Hall effect (SHE)-induced spin–orbit torque (SOT) changed the...
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Engineering the resistive switching properties of 2D WS2 memristor: role of band gap
WS 2 with different layers were prepared by liquid-phase cascade centrifugation and then applied to fabricate Ag/WS 2 /Cu memristors. The correlation...
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The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing
As an emerging information device that adapts to development of the big data era, memristor has attracted much attention due to its advantage in...
