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Timescales and contribution of heating and helicity effect in helicity-dependent all-optical switching
The heating and helicity effects induced by circularly polarized laser excitation are entangled in the helicity-dependent all-optical switching...
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Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which...
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Optically induced ultrafast magnetization switching in ferromagnetic spin valves
The discovery of spin-transfer torque (STT) enabled the control of the magnetization direction in magnetic devices in nanoseconds using an electrical...
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Understanding asymmetric switching times in accumulation mode organic electrochemical transistors
Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors in...
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Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte
The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their...
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Enabling ultra-low-voltage switching in BaTiO3
Single crystals of BaTiO 3 exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in...
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Switching Behavior and Negative Differential Resistance in a Carbon Matrix Based on Resorcinol-Formaldehyde
Carbon xerogel was prepared by a sol–gel technique by mixing formaldehyde with dissolved resorcinol in acetone solution using picric acid as a...
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Model of Multifilamentary Resistive Switching for a Memristor with Hop** Conductivity
Many applications, including learning neuromorphic computing systems, require the analogue or, at least, multilevel resistive switching (RS) of...
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Asynchronous current-induced switching of rare-earth and transition-metal sublattices in ferrimagnetic alloys
Ferrimagnetic alloys are model systems for understanding the ultrafast magnetization switching in materials with antiferromagnetically coupled...
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Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive...
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On the switching dynamics of epitaxial ferroelectric CeO2–HfO2 thin film capacitors
Epitaxial layers of ferroelectric orthorhombic HfO 2 are frequently investigated as model systems for industrially more relevant polycrystalline...
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Enhancement noise margin and delay time performance of novel punch-through nMOS for single-carrier CMOS
In this paper, we propose the use of punch-through nMOS (PTnMOS) as an alternative to pMOS in complementary metal oxide semiconductor (CMOS)...
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Necessary conditions for steep switching in a constant Resistor-Capacitor RCFET
We establish that the phenomenon of transient negative capacitance, conventionally linked to the delay in the response of a domain switching, of a...
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The method of reducing the CMOS inverter switching energy
In CMOS inverters, the main part of the power supply is spent on charging the parasitic capacitance of the transistor gates and the load capacitance....
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Temperature induced low voltage write-once-read-many resistive switching in Ag/BTO/Ag thin films
The effect of deposition temperature on surface morphology and write once read many times resistive switching properties of RF sputtered BaTiO 3 (BTO)...
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Bipolar resistive switching behavior in Pt/Zn1−xMgxO/pyrographite/Pt structure for memory application
Zn 1− x Mg x O thin films have been deposited on highly polished pyrographite substrates using pulsed laser deposition system in vacuum. Platinum...
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Crystallographic orientation–dependent resistive switching devices based on hybrid Ga2O3 thin films
Resistive random-access memories (RRAMs) based on wide-bandgap oxides are not only a promising candidate for next-generation non-volatile storage...
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Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3
Ferroelectricity can reduce the subthreshold swing ( SS ) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below the room-temperature...
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Mathematical Modeling of an Analogue Self-Learning Neural Network Based on Memristive Elements Taking into Account Stochastic Switching Dynamics
AbstractIn this paper, we consider the issues of modeling an analog self-learning pulsed neural network based on memristive elements. One of the...
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Self-heating-induced electrical and optical switching in high quality VO2 films controlled with current pulses
Self-heating (SH)-induced electrical and optical switching in high quality VO 2 films grown by magnetron sputtering on a c-cut sapphire substrate has...
