Search
Search Results
-
Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR
Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...
-
Developments and Process Improvements Leading to High-Quality and Large-Area HgCdTe LPE Detectors
Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...
-
HgCdTe Films Grown by MBE on CZT(211)B Substrates
An investigation of the properties of HgCdTe films grown by MBE and devices made from such films are reported. Through the precise control of growth...
-
Rule-22: An Update to Rule-07
Rule-22 is an update to Rule-07 with higher accuracy in the low 1/ λT regime (1/ λT < 0.0025) and accurately predicting dark current in the high 1/ λT ...
-
Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications
In this paper, a systematic study of interdiffusion in (112)B oriented HgTe/CdTe superlattice (SL) structures has been undertaken in order to...
-
HgCdTe Diode Dark Current Modeling: Rule 07 Revisited for LW and VLW
Rule 07 is very convenient for dark current estimation of high-quality HgCdTe P -on- n photodiodes used in focal-plane arrays for science imaging, in...
-
Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes
Both low-frequency noises and electrically active defects have been investigated for two technological variants, i.e. optimized and non-optimized, of...
-
In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe
We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area Cd 1− y Zn...
-
Progress in Quantum Dot Infrared Photodetectors
This chapter reviews the present status and possible future developments of QDIPs. An emphasis is put on potential developments of both epitaxial and...
-
InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection
Type-II superlattices based on In 0.53 Ga 0.47 As/GaAs 0.51 Sb 0.49 (5 nm/5 nm) lattice-matched to InP substrates are investigated for short-wavelength...
-
Introduction
Think about any day in your life. How many of our possessions contain, at least, one microchip that are made of semiconductors? Semiconductors are...
-
Terahertz Quantum Dot Intersublevel Photodetector
A terahertz photodetector receives terahertz frequency in the range of ~0.3 to ~30 THz from a source in the input terminal and transforms the input...
-
Method of electron affinity evaluation for the type-2 InAs/InAs1−xSbx superlattice
The type-2 InAs/InAs 1−x Sb x superlattices on GaAs substrate with GaSb buffer layer were investigated by comparison of theoretical simulations and...
-
Performance Limits of III–V Barrier Detectors
Minority-carrier lifetimes and diffusion lengths have been deduced from a comparison of band structure simulations and experimental measurements on...
-
Optical Properties of MBE-Grown Hg1−xCdxSe
In this work, we present a study on the temperature-dependent infrared absorption spectra of Hg 1− x Cd x Se grown by molecular beam epitaxy (MBE) on GaSb...
-
Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe
Undoped mid-wave infrared Hg 1− x Cd x Se epitaxial layers have been grown to a nominal thickness of 8–14 μ m on GaSb (211)B substrates by molecular beam...
-
Development of InAs/InAsSb Type II Strained-Layer Superlattice Unipolar Barrier Infrared Detectors
We recently reported mid-wavelength infrared (MWIR) InAs/InAsSb type II strained-layer superlattice (T2SLS) unipolar barrier detectors and...
-
Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs
CdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied...
-
Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current
We present our latest results on cooled p -on- n planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current...
-
Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications
This paper presents recent developments at Commissariat à l’Energie atomique, Laboratoire d’Electronique et de Technologie de l’Information infrared...