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Total Ionization Dose (TID) Effects on 2D MOS Devices
Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic...
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Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations
The γ-ray total dose radiation effects on HfO 2 -based ferroelectric thin-film memories with various configurations were investigated. Electrical...
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Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors
The behavior of ferroelectric thin film capacitors under radiation environments is significant for the development of rad-hard ferroelectric random...
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Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs
This manuscript describes an experimental comparative study of effects of the total ionizing dose (TID) on the main electrical parameters and figures...
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Radiation Damage and Mitigation by Minority Carrier Injection in InAsSb/AlAsSb Heterojunction Barrier Mid-Wave Infrared Detector
The effects of gamma and proton irradiation, and of forward bias minority carrier injection, on photo-response were investigated for InAsSb/AlAsSb...
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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors
The n-type ultrathin fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs), with a Hf 0.5 Zr 0.5 O 2 ...
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Conductive Filament Variation of RRAM and Its Impact on Single Event Upset
Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high...
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Improvement of Device Reliability and Variability Using High Pressure Deuterium Annealing
Higher device reliability and lower device-to-device variability are needed to improve the density and yield of integrated circuits. A high pressure...
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A Study of the Performance of an N-Channel MOSFET Under Gamma Radiation as a Dosimeter
This paper is devoted to the effect of gamma radiation on commercial IRFP250 N -channel metal oxide semiconductor field effect transistors (MOSFETs)...
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YBCO-based non-volatile ReRAM tested in Low Earth Orbit
An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have...
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Optical Fiber Sensors in Ionizing Radiation Environments
The present chapter addresses the use of optical fiber sensors (OFSs) in ionizing radiation environments. In this context, OFS research reflects (i)... -
SiO2-Based Conductive-Bridging Random Access Memory
We present a review on the subject of conductive-bridging random access memory (CBRAM) based on copper- or silver-doped silicon dioxide. CBRAM is a... -
Research on Electromagnetic Effect of Irradiation on Silicon via Interconnects
The paper was studied the damage effect mechanism of proton radiation on metallic interconnect, where the metal electron migration was caused by...
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Optical Fiber Sensors in Ionizing Radiation Environments
The present chapter addresses the use of optical fiber sensors (OFSs) in ionizing radiation environments. In this context, OFS research reflects (i)... -
Microstructural evolution and shear performance of AuSn20 solder joint under gamma-ray irradiation and thermal cycling
Owing to the excellent stability and mechanical strength, AuSn20 solder is of particular importance to the die attachment in aerospace power modules....
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Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II–VI and III–V MWIR Detector Technologies for Space Applications
The degradation of the minority-carrier recombination lifetime of various III–V n B n and II–VI HgCdTe midwave-infrared space detector materials under...
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Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device
The total ionizing dose (TID) effects of 60 Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO ...
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SiO2 based conductive bridging random access memory
We present a review on the subject of Conductive Bridging Random Access Memory (CBRAM) based on copper- or silver-doped silicon dioxide. CBRAM is a...
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Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors
Radiation-tolerant materials, sensors and electronics can enable lightweight space subsystems with reduced packaging requirements and increased...
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