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Showing 1-20 of 33 results
  1. Total Ionization Dose (TID) Effects on 2D MOS Devices

    Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic...

    Shashi Bala, Raj Kumar, Arvind Kumar in Transactions on Electrical and Electronic Materials
    Article 02 November 2020
  2. Investigation of ionizing radiation mechanisms on HfO2-based ferroelectric thin-film memories with various configurations

    The γ-ray total dose radiation effects on HfO 2 -based ferroelectric thin-film memories with various configurations were investigated. Electrical...

    Wanli Zhang, Guangliang Wan, ... Yanhu Mao in Journal of Materials Science: Materials in Electronics
    Article 04 February 2024
  3. Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors

    The behavior of ferroelectric thin film capacitors under radiation environments is significant for the development of rad-hard ferroelectric random...

    Qi Sun, Jiajia Liao, ... Yichun Zhou in Journal of Materials Science: Materials in Electronics
    Article 21 December 2019
  4. Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs

    This manuscript describes an experimental comparative study of effects of the total ionizing dose (TID) on the main electrical parameters and figures...

    Luís Eduardo Seixas Jr., Odair Lellis Gonçalez, ... Salvador Pinillos Gimenez in Journal of Materials Science: Materials in Electronics
    Article 18 January 2019
  5. Radiation Damage and Mitigation by Minority Carrier Injection in InAsSb/AlAsSb Heterojunction Barrier Mid-Wave Infrared Detector

    The effects of gamma and proton irradiation, and of forward bias minority carrier injection, on photo-response were investigated for InAsSb/AlAsSb...

    R. E. Peale, C. J. Fredricksen, J. F. Klem in Journal of Electronic Materials
    Article 10 July 2023
  6. X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

    The n-type ultrathin fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs), with a Hf 0.5 Zr 0.5 O 2 ...

    Yu-Dong Li, Qing-Zhu Zhang, ... Jiang Yan in Rare Metals
    Article 24 September 2020
  7. Conductive Filament Variation of RRAM and Its Impact on Single Event Upset

    Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high...

    H. M. Vijay, V. N. Ramakrishnan in Transactions on Electrical and Electronic Materials
    Article 10 June 2021
  8. Improvement of Device Reliability and Variability Using High Pressure Deuterium Annealing

    Higher device reliability and lower device-to-device variability are needed to improve the density and yield of integrated circuits. A high pressure...

    Dae-Han Jung, Sung-Su Yoon, ... Jun-Young Park in Transactions on Electrical and Electronic Materials
    Article 04 November 2022
  9. A Study of the Performance of an N-Channel MOSFET Under Gamma Radiation as a Dosimeter

    This paper is devoted to the effect of gamma radiation on commercial IRFP250 N -channel metal oxide semiconductor field effect transistors (MOSFETs)...

    H. A. Farroh, A. Nasr, K. A. Sharshar in Journal of Electronic Materials
    Article 31 July 2020
  10. YBCO-based non-volatile ReRAM tested in Low Earth Orbit

    An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have...

    C. Acha, M. Barella, ... F. Golmar in Journal of Materials Science: Materials in Electronics
    Article 14 August 2020
  11. Optical Fiber Sensors in Ionizing Radiation Environments

    The present chapter addresses the use of optical fiber sensors (OFSs) in ionizing radiation environments. In this context, OFS research reflects (i)...
    Reference work entry 2019
  12. SiO2-Based Conductive-Bridging Random Access Memory

    We present a review on the subject of conductive-bridging random access memory (CBRAM) based on copper- or silver-doped silicon dioxide. CBRAM is a...
    Wenhao Chen, Stefan Tappertzhofen, ... Michael N. Kozicki in Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
    Chapter 2022
  13. Research on Electromagnetic Effect of Irradiation on Silicon via Interconnects

    The paper was studied the damage effect mechanism of proton radiation on metallic interconnect, where the metal electron migration was caused by...

    Article 10 February 2020
  14. Optical Fiber Sensors in Ionizing Radiation Environments

    The present chapter addresses the use of optical fiber sensors (OFSs) in ionizing radiation environments. In this context, OFS research reflects (i)...
    Living reference work entry 2018
  15. Microstructural evolution and shear performance of AuSn20 solder joint under gamma-ray irradiation and thermal cycling

    Owing to the excellent stability and mechanical strength, AuSn20 solder is of particular importance to the die attachment in aerospace power modules....

    Li Wen, Songbai Xue, ... Jie Wu in Journal of Materials Science: Materials in Electronics
    Article 28 March 2020
  16. Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II–VI and III–V MWIR Detector Technologies for Space Applications

    The degradation of the minority-carrier recombination lifetime of various III–V n B n and II–VI HgCdTe midwave-infrared space detector materials under...

    Geoffrey D. Jenkins, Christian P. Morath, Vincent M. Cowan in Journal of Electronic Materials
    Article 21 June 2017
  17. Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device

    The total ionizing dose (TID) effects of 60 Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO ...

    Fang Yuan, Zhigang Zhang, ... Chao-Sung Lai in Nanoscale Research Letters
    Article Open access 29 August 2014
  18. SiO2 based conductive bridging random access memory

    We present a review on the subject of Conductive Bridging Random Access Memory (CBRAM) based on copper- or silver-doped silicon dioxide. CBRAM is a...

    Wenhao Chen, Stefan Tappertzhofen, ... Michael N. Kozicki in Journal of Electroceramics
    Article 15 March 2017
  19. Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors

    Radiation-tolerant materials, sensors and electronics can enable lightweight space subsystems with reduced packaging requirements and increased...

    Heather C. Chiamori, Nicholas Broad, ... Debbie G. Senesky in MRS Online Proceedings Library
    Article 01 May 2015
  20. Piezoelectric MEMS Switch

    R. G. Polcawich, J. S. Pulskamp, R. M. Proie in Encyclopedia of Nanotechnology
    Reference work entry 2016
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