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Study of Thermal Conductivity of Materials Based on Silicon Carbide and Silicon Nitride
AbstractThis paper presents the temperature dependences of the thermal conductivity of materials based on silicon carbide and silicon nitride,...
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Silicon Carbide Sand Usage in Backside Processing of Silicon Transistor Structures
A method is proposed for processing the back side of silicon transistor structures before metallization [metal deposition] and before contact to the...
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Phase formation of cubic silicon carbide from reactive silicon–carbon multilayers
Silicon carbide layers were fabricated using self-propagating high-temperature synthesis of binary silicon-carbon based reactive multilayers. The...
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Implemention of Self-Propagating Low-Temperature Synthesis to Produce Pure Silicon Carbide
Results of research into formation of ultrapure silicon carbide by self propagating synthesis are described. This synthesis provides a reduction in...
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Methods of Forming Geometrically Complex Manufactured Products from Silicon-Carbide Based, Heat-Resistant, Ceramic Materials
The possibility of producing geometrically complex mechanical-engineering products based on reaction-sintered silicon carbide using two methods was...
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Magnesium-Thermal Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Carbon Fibers as the Carbon Source
This paper presents the results of studies on silicon carbide production by self-propagating high-temperature synthesis. To provide the necessary...
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Silicon carbide synthesis investigation in an electrothermal fluidized bed
This work is devoted to the computational study of the efficiency of the SIC synthesis process in an electrothermal fluidized bed at different...
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A Comparative Study of Methods for Obtaining Silicon Carbide Ceramic Materials
To date, about ten different methods for producing silicon carbide ceramic materials have been developed. This study presents the mechanisms and...
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Influence of Silicon Carbide Introduced into a Flux-Cored Wire Charge on Deposited Metal Structure
The article considers schemes of flux-cored wire arc surfacing within protective gases both with and without an additional filler. In the scheme with...
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Microwave Processing of Diamond–Carbide Silicon Composite
AbstractTo improve the characteristics, samples of diamond–carbide silicon composite were subjected to microwave processing. The products were placed...
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Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide
AbstractA hybrid multiscale model consisting of two coupled modules is used to study the effect of irradiation temperature on the kinetics of the...
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Determination of the Mechanical Characteristics of the Ideal Ceramic (Diamond–Silicon Carbide Composite)
AbstractIn this paper, a new diamond–silicon carbide ceramic composite material—Ideal—is studied and its mechanical characteristics are determined....
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Silicon-Carbide Epitaxial Structures for Betavoltaic Converters
AbstractA physical and technological analysis of silicon-carbide epitaxial structures as the basic components of betavoltaic converters (BVC) is...
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Diffusion-Driven Frictional Aging in Silicon Carbide
AbstractFriction is the force resisting relative motion of objects. The force depends on material properties, loading conditions and external factors...
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Application of Methane and Micro Silica for Silicon Carbide Synthesis
A new direction in silicon carbide synthesis technology, which meets resource conservation requirements, is using large-tonnage artificial waste....
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Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide
AbstractThe effect of the electron-irradiation temperature on radiation-defect formation in silicon carbide is studied for the first time. Commercial...
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Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide
Pressure-induced magnetic phase transitions are attracting interest as a means to detect superconducting behaviour at high pressures in diamond anvil...
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Crack Formation Reduction on Diamond-Paste Abrasive Processing of Silicon-Carbide Semiconductor Wafers
The results of diamond-abrasive processing of the backside of 4H- and 6H-polytype silicon-carbide semiconductor wafers are presented. The sizes of...
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Synthesis, structural features, and optical limiting application of silicon carbide nanoflakes
Silicon carbide (SiC) is a significant semiconductor candidate for the third generation which possesses excellent chemical and physical...
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Use of Additive Technologies for Making Silicon Carbide Ceramic Materials: A Review
The types of additive technologies and the prospects for their use in the fabrication of products from silicon carbide ceramic materials are...
