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  1. A vacuum pressure sensor based on graphene/ZnO nanorod Schottky junction

    We present a practical vacuum pressure sensor based on the Schottky junction using graphene anchored on a vertically aligned zinc oxide nanorod...

    P. Sakthivel, K. Ramachandran, ... P. Manivel in Carbon Letters
    Article 07 October 2023
  2. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes

    GaN and related nitride semiconductors have attracted considerable interest for use in solid-state light and high-power/-frequency devices....

    Article 03 February 2024
  3. Fabrication and Characterization of a Silicon Carbide Based Schottky Barrier Diode

    In this work, we report the fabrication and characterization of a Schottky diode containing a metal–semiconductor Schottky junction. The...

    Rajesh Singh Shekhawat, Sk. Masiul Islam, ... Sudipta Bhattacharya in Journal of Electronic Materials
    Article 19 August 2023
  4. Electrical properties of Al/CZTSe nanocrystal Schottky diode

    In this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different...

    Z. Kişnişci, F. Özel, ... Ö. F. Yüksel in Journal of Materials Science: Materials in Electronics
    Article Open access 15 April 2024
  5. High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

    Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The...

    G. Di Gioia, E. Frayssinet, ... M. Zaknoune in Journal of Electronic Materials
    Article 19 May 2023
  6. Recent Progress of Gr/Si Schottky Photodetectors

    By combing the carrier mobility of graphene with the excellent light absorption properties of silicon, ultra-shallow Schottky junction can be...

    Qingguo Shao, Hao Qi, ... **aobei Zang in Electronic Materials Letters
    Article 08 November 2022
  7. Reconfigurable WSe2 Schottky heterojunctions for logic rectifiers and ultrafast photodetectors

    Van der Waals heterojunction-based self-powered photodetectors (SPPDs) based on two-dimensional materials play an important role in the fields of...

    Jianming Huang, Kaixiang Shu, ... Wei Gao in Science China Materials
    Article 22 November 2023
  8. Low-energy-consumption organic synaptic transistors with high recognition accuracy enabled by Schottky barrier regulation

    To build neuromorphic computing networks equivalent to the human brain, single artificial synaptic devices should exhibit low energy consumption down...

    Tianjian Chen, Rengjian Yu, ... Wei Chen in Science China Materials
    Article 08 October 2023
  9. Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories

    Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image...

    Mohamed Belmoubarik, Muftah Al-Mahdawi, ... Weng Kung Peng in Journal of Materials Science: Materials in Electronics
    Article 29 February 2024
  10. Temperature-dependent electrical properties of schottky barrier diodes based on carbon nanotube arrays

    In this study, the current conduction mechanisms (CCMs) of the carbon nanotube Schottky barrier diodes (CNT SBDs) based on carbon nanotube arrays on...

    Zhi Huang, Zhen Zhang, ... Bing Sun in Journal of Materials Science: Materials in Electronics
    Article 26 April 2023
  11. Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions

    Metal/semiconductor structures, particularly Schottky diodes, play a crucial role in semiconductor identification and the production of electronic...

    D. E. Yıldız, S. Karadeniz, ... M. Yavuz in Journal of Materials Science: Materials in Electronics
    Article Open access 29 February 2024
  12. In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions

    Pt/n-GaN Schottky diodes were fabricated on metal organic chemical vapor deposition grown epitaxial GaN thin films. Temperature-dependent electrical...

    Navneet Kumar, F. Chand, ... Ashish Kumar in Journal of Materials Science: Materials in Electronics
    Article 20 September 2023
  13. Optical properties of chemically synthesized SnS2 nanostructure and study of current transport mechanism in Schottky and heterojunction diodes

    SnS 2 nanostructure was prepared by Chemical bath deposition method using sodium sulfide (Na 2 S) and tin (IV) chloride hydrate (SnCl 4 ⋅H 2 O) as source of...

    Lohnye Tangjang, Prerona Singha, ... P. K. Kalita in Journal of Materials Science: Materials in Electronics
    Article 24 January 2024
  14. In-situ transformed Mott-Schottky heterointerface in silver/manganese oxide nanorods boosting oxygen reduction, oxygen evolution, and hydrogen evolution reactions

    The development of non-platinum group metal (non-PGM) and efficient multifunctional electrocatalysts for oxygen reduction reaction (ORR), oxygen...

    Ruiqi Cheng, Kaiqi Li, ... Chaopeng Fu in Nano Research
    Article 31 October 2023
  15. Density Functional Theory-Based Study of Ag/ZnO Schottky Diode

    Here, a ZnO thin film was deposited on a silicon substrate. The hexagonal structure of this deposited film was measured by x-ray diffraction and...

    Aniruddh Bahadur Yadav, N. V. L. Narasimha Murty, ... Basavaraj S. Sannakashappanavar in Journal of Electronic Materials
    Article 23 February 2023
  16. Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

    In the present study, the Schottky diode devices based on Ce and Sm co-doped ZnO thin films were fabricated using the sol–gel spin-coating technique...

    Mustafa A. M. Ahmed, W. E. Meyer, J. M. Nel in Journal of Materials Science: Materials in Electronics
    Article Open access 09 June 2023
  17. A complementary low-Schottky-barrier S/D-based nanoscale do**less bidirectional reconfigurable field effect transistor with an improved forward current

    In this paper, a nanoscale do**less bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal...

    **aoshi **, Shouqiang Zhang, ... ** Liu in Discover Nano
    Article Open access 24 March 2023
  18. Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements

    In this study, the fabricated Al/ p -Si Schottky diode is characterised at room temperature using current–voltage ( I–V ) and...

    Article Open access 24 August 2023
  19. Schottky analysis of formamidinium lead halide perovskite nanocrystals’ devices with enhanced stability

    Perovskite nanocrystals (PNCs) find a central role in the flourishing semiconductor industry with desirable optical and electronic properties with...

    Monisha Nayak, Riya Nag, ... Sudip K. Saha in Applied Nanoscience
    Article 28 June 2022
  20. The impact of the shape of zinc oxide nanoparticles on electrical parameters of natural dye-based FTO/Beetroot/Al Schottky diode

    In this report, we have used cylindrical and spherical zinc oxide (ZnO) nanoparticles to fabricate FTO/ZnO/Al and herbal dye-based FTO/Beet + ZnO/Al...

    Aloke Kumar Das, N. B. Manik, ... D. K. Mandal in Journal of Materials Science: Materials in Electronics
    Article 31 August 2023
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