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Showing 1-20 of 265 results
  1. Physical vapor deposition and enhancement of optoelectronic properties of SnSe2 platelets

    Stoichiometric tin diselenide (SnSe 2 ) platelet crystals have been prepared by physical vapor deposition (PVD) method under high vacuum (~ 10 –6 mbar)...

    J. Bibin, A. G. Kunjomana, M. Teena in Journal of Materials Science: Materials in Electronics
    Article 27 October 2022
  2. 1D slipped stacking microribbon-like crystals based on 6,13-dicyanopentacene for ambipolar charge transport

    Featuring small charge transport scattering, mesoscale size, and easy fabrication, one-dimensional self-assembled micro/nanomaterials (1D-MNMs) based...

    Zongrui Wang, Yang Hu, ... Yonggang Zhen in Science China Materials
    Article 03 March 2023
  3. Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

    With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to...

    Tuerxun Ailihumaer, Hongyu Peng, ... Edward Sanchez in Journal of Electronic Materials
    Article 11 March 2021
  4. Polytype switching identification in 4H-SiC single crystal grown by PVT

    Generally, it is very difficult to grow large diameter 4H-SiC single crystal with single polytype by Physical Vapor Transport (PVT) growth method and...

    Aman Arora, Akhilesh Pandey, ... Renu Tyagi in Journal of Materials Science: Materials in Electronics
    Article 13 August 2020
  5. Selective growth of α-form zinc phthalocyanine nanowire crystals via the flow rate control of physical vapor transport

    Abstract

    α-Form zinc phthalocyanine (ZnPc), a kinetically favorable form of ZnPc, is an efficient photosensitizer for photodynamic cancer therapy,...

    Youngkwan Yoon, Soyoung Kim, Hee Cheul Choi in NPG Asia Materials
    Article Open access 07 February 2020
  6. Growth of (100)-orientation-preferred BiI3 nanoplate films by vapor transport deposition for photovoltaic application

    As one of the bismuth-based halide families, BiI 3 has been widely studied and investigated due to its outstanding anisotropic electronic and optical...

    Wenbin Yuan, Zhufeng Shao, ... Min Zhong in Journal of Materials Science: Materials in Electronics
    Article 19 August 2022
  7. A review of the simulation studies on the bulk growth of silicon carbide single crystals

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that is viable for the next generation of high-performance and high-power electrical...

    Minh-Tan Ha, Seong-Min Jeong in Journal of the Korean Ceramic Society
    Article 18 February 2022
  8. 4D scanning transmission electron microscopy (4D-STEM) reveals crystallization mechanisms of organic semiconductors on graphene

    Organic semiconductor materials exhibit properties that enable use in various electrical devices, such as organic solar cells and field-effect...

    Zixuan Guo, Colin Ophus, ... Enrique D. Gomez in MRS Communications
    Article 05 January 2023
  9. Mercurous Bromide (Hg2Br2) Acousto-Optic Tunable Filters (AOTFs) for the Long Wavelength Infrared (LWIR) Region

    Abstract

    This paper describes the development of acousto-optic tunable filter (AOTF) devices that are fabricated using in-house grown, high-quality...

    Priyanthi M. Amarasinghe, Joo-Soo Kim, ... Neelam Gupta in Journal of Electronic Materials
    Article 27 July 2021
  10. Influence of Net Do** Concentration on Carrier Lifetime in 4H-SiC Substrates

    Lightly nitrogen-doped (N-doped) and vanadium-doped (V-doped) 4H-SiC single crystals grown by physical vapor transport were used to investigate the...

    Hongyu Shao, **anglong Yang, ... **angang Xu in Journal of Electronic Materials
    Article 06 March 2024
  11. Automated analysis of X-ray topography of 4H-SiC wafers: Image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations

    Abstract

    The physical vapor transport (PVT) crystal growth process of 4H-SiC wafers is typically accompanied by the occurrence of a large variety of...

    Binh Duong Nguyen, Melissa Roder, ... Stefan Sandfeld in Journal of Materials Research
    Article Open access 09 January 2023
  12. Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations

    Silicon carbide (SiC) is an important semiconductor material for a variety of electronic and optoelectronic applications owing to the unique...

    Qianyu Cheng, Tuerxun Ailihumaer, ... Michael Dudley in Journal of Electronic Materials
    Article 26 April 2021
  13. Optical properties of PVT grown bromoaluminium phthalocyanine nanostructures using UV–visible–NIR spectroscopy

    In this paper, we have studied the optical properties of bromoaluminium phthalocyanine (BrAlPc) nanostructures prepared by physical vapor phase...

    Sobhenaz Riyazi, M. E. Azim Araghi, Salar Pourteimoor in Journal of Materials Science: Materials in Electronics
    Article 09 March 2019
  14. Hot-zone design and optimization of resistive heater for SiC single crystal growth

    In recent years, SiC single crystal growth technology has been developed toward larger size and thickness to reduce the cost of SiC-based power...

    **nglong Wang, Xuejian **e, ... **angang Xu in Journal of Materials Science
    Article 14 May 2024
  15. Novel nanostructures of bromoaluminum phthalocyanine grown by physical vapor phase transport

    The growth of new nanostructured organic semiconductor materials such as metal phthalocyanines instead of polycrystalline thin films can provide the...

    Salar Pourteimoor, Hamid Haratizadeh, ... Misagh Ghezellou in Journal of Materials Science: Materials in Electronics
    Article 19 July 2018
  16. Adsorption and Wetting of Component Surfaces

    The wetting properties of component surfaces are important in many technical applications. They depend on the wetting liquid and the morphology of...
    Hans Hasse, Martin T. Horsch, ... Herbert M. Urbassek in Component Surfaces
    Chapter 2024
  17. Performance of Chromium Doped Zinc Selenide Nanocrystals: Morphological and Fluorescence Characteristics

    Chromium doped ZnSeZnSe nanocrystalsNanocrystals were grown at low temperature using zinc acetate and sodium selenite. A cap** agent was used to...
    N. B. Singh, Ching Hua Su, ... K. D. Mandal in TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings
    Conference paper 2021
  18. Syntaxy and defect distribution during the bulk growth of 4H-SiC Single crystal

    In the present study, the inclusion of 6H foreign polytype was seen during the initial growth of 4H polytype silicon carbide single crystal by PVT...

    Ankit Patel, Mani Mittal, ... O. P. Thakur in Journal of Materials Science: Materials in Electronics
    Article 02 January 2021
  19. Rapid chemiresistive detection of p-nitrophenol through Porphyrin-functionalized 2D materials: a step toward environmental monitoring

    Chemiresistive gas sensors have gained attention due to their simple device structure, portability, easy fabrication, and operation. However, one of...

    Jyoti Gupta, Dhana Sai Shree Kandkuri, Sunita Rattan in Journal of Materials Science
    Article 23 February 2024
  20. Microstructure and magnetic properties of vapor-grown CdTe:Cr crystals with do**-induced precipitates

    The effects of heavy do** with Cr and do**-induced precipitation on the magnetism of CdTe crystals, grown from the vapor phase, were investigated...

    K. Morawiec, V. D. Popovych, ... M. Shiojiri in Journal of Materials Science
    Article 22 March 2023
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