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Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels
In this paper, a double REduced SURface Field (RESURF) P-GaN gate AlGaN/GaN heterostructure field-effect transistor with a partial N-GaN channel...
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness
The impact of GaN buffer layer thickness on the properties of GaN films grown by MOVPE on (001), (113), and (111) GaAs substrate orientations were...
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Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Do**-Free GaN Cap
GaN-based enhancement-mode high-electron-mobility transistors (HEMTs) with a 25-nm-thick undoped GaN (u-GaN) cap underneath the gate metallization on...
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Growth of continuous GaN films on ZnO buffer layer by chemical vapor deposition for ultraviolet photodetector
In this work, c -axis-oriented continuous GaN films have been synthesized by the chemical vapor deposition (CVD) method using ZnO material as the...
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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate
This paper presents a metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) device, operating in enhancement mode, with a...
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Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
Due to the enhanced-mode (E-mode) operation, AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered to be safer for circuit operation....
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High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer
GaN on graphene/Al 2 O 3 substrates grown via van der Waals epitaxy compensates for the deficiencies and defects caused by metal-organic chemical vapor...
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Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)
We have grown epitaxial GaN nanowalls network (NWN) on AlN buffered pre-nitridated sapphire (11–20) substrate using AlN buffer by laser-assisted...
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Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on β-gallium oxide (β-Ga 2 O 3 ) wafers with various back barrier (BB) materials have...
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High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor
This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the...
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A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes
GaN and related nitride semiconductors have attracted considerable interest for use in solid-state light and high-power/-frequency devices....
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Suitability of thin-GaN for AlGaN/GaN HEMT material and device
In this study, we report about the suitability of thin-GaN (~ 200 nm) for AlGaN/GaN HEMT (High Electron Mobility Transistor) material and device....
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Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates
An experimentally calibrated technology computer-aided design (TCAD) simulation was conducted to study P-GaN gate AlGaN/GaN heterostructure...
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Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS
GaN has been demonstrated as an important wide-bandgap semiconductor in many applications, especially in optoelectronic and high-power electronics....
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Effect of Carrier Gas on Silicon Doped GaN Epilayer Characteristics
Heavily Si-doped GaN epitaxial layers (n + GaN) have been grown on semi-insulating 6H-SiC substrate by metal–organic chemical vapor deposition at...
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Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display...
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Observation of ballistic-diffusive thermal transport in GaN transistors using thermoreflectance thermal imaging
To develop effective thermal management strategies for gallium-nitride (GaN) transistors, it is essential to accurately predict the device junction...
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High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs
GaN-based enhancement-mode high-electron-mobility transistors (HEMTs) are potential frontrunners for high-frequency power applications due to their...
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Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness
In this research article, a recessed field-plated gate AlGaN/GaN-based nano-high electron mobility transistor (HEMT) grown on a β-Ga 2 O 3 substrate is...
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A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–semiconductor (MOS) high-electron-mobility transistors (HEMTs),...
