Search
Search Results
-
Study on oxygen vacancies in gallium oxide nanostructures
Monoclinic-oriented gallium oxide ( β -Ga 2 O 3 ) has diverse applications in optoelectronic devices due to its wide bandgap and stable thermal properties....
-
Effect of Na+ and Sr2+ Substitution on the Formation of the Oxygen Vacancies in Y3Al2Ga3O12:Ce3+ Phosphor
The low-valence cations Na + and Sr 2 + were selected as the co-dopants to increase the vacancies concentration in the Y 2.982 Ce 0.018 Al 2 Ga 3 O 12 phosphor....
-
Electron-Beam-Induced Formation of Oxygen Vacancies in Epitaxial LaCoO3 Thin Films
The formation of oxygen vacancies in heteroepitaxial LaCoO 3 thin films deposited on different substrates was investigated by using electron beam...
-
Effect of point defects on electrochemical performances of α-Ga2O3 microrods prepared with hydrothermal process for supercapacitor application
α-Ga 2 O 3 microrods was deposited on carbon cloth (CC) using a hydrothermal process followed by a high-temperature annealing in air. The microstructure...
-
The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3
Defects created in lightly Sn-doped (2 × 10 16 cm −3 ) (010)-oriented bulk β-Ga 2 O 3 implanted with 1.2 MeV, 3 × 10 15 cm −2 197 Au + ions before and after...
-
Influence of High-Dose 80 MeV Proton Irradiation on the Electronic Structure and Photoluminescence of β-Ga2O3
Abstractβ-Ga 2 O 3 is regarded as one of the best materials for application in deep space exploration; thus, research on β-Ga 2 O 3 -related radiation...
-
Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation
AbstractUsing the mathematical modeling of a displacement cascade in two wide-gap semiconductors based on gallium, gallium oxide (Ga 2 O 3 ), and...
-
Crystallographic orientation–dependent resistive switching devices based on hybrid Ga2O3 thin films
Resistive random-access memories (RRAMs) based on wide-bandgap oxides are not only a promising candidate for next-generation non-volatile storage...
-
Boosting cycling stability by regulating surface oxygen vacancies of LNMO by rapid calcination
Spinel LiNi 0.5− x Mn 1.5+ x O 4 (LNMO) has attracted intensive interest for lithium-ion battery due to its high voltage and high energy density. However,...
-
Composition-Dependent Thermodynamic Factor and Tracer Diffusion of A15-V3Ga Intermetallic Compound
We determined the compositional dependence of thermodynamic factor in the V 3 Ga phase using CALPHAD-based study for which the Thermocalc software was...
-
Role of oxygen vacancies on Li-doped Ni:ZnO thin films for enhanced NO2 gas sensing applications
In this study, pure ZnO, 5 wt.% Ni doped-ZnO (Ni:ZnO), 1 wt.% Li doped-ZnO (Li:ZnO), and (1 wt.% Li–5 wt.% Ni) co-doped ZnO (Ni/Li:ZnO) thin films...
-
Structural, optical and vacancies investigations of Li-doped ZnO
We have synthesised undoped and Li-doped ZnO by co-precipitation method and solid-state route resulting in ZnO (Zn 1-x Li x O; x = 0, 0.03, 0.05, 0.08)...
-
Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices
In recent years, ultra-wide bandgap β-Ga 2 O 3 has emerged as a fascinating semiconductor material due to its great potential in power and photoelectric...
-
Structural, magnetic, optical, and dielectric properties of Ga-K substituted BiFeO3 ceramics
Gallium was substituted in Bi 0.97 K 0.9 Fe 1− x Ga x O 3 ( x = 0.00, 0.04, 0.08, 0.12, and 0.16) and synthesized using a simple citrate sol–gel technique....
-
Preparation and UV detection performance of Ti-doped Ga2O3/intrinsic-Ga2O3/p-Si PIN photodiodes
In this work, PIN-structured photodiodes were fabricated by sputtering intrinsic-Ga 2 O 3 and n-Ga 2 O 3 with various Ti do** concentrations sequentially...
-
Theoretical Insights into Band Gap Tuning Through Cu Do** and Ga Vacancy in GaSe Monolayer: A First-Principles Perspective
Gallium selenide (GaSe) has become increasingly popular in the field of optoelectronics due to its suitable band gap. The layered structure of bulk...
-
Structure and magneto-electric properties of hydrothermally prepared nanocrystalline GaxFe2−xO3 (x = 0.7, 1 & 1.3)
In this work, we report the effect of gallium content on the structure and electric, magnetic, and magnetoelectric properties of hydrothermally...
-
Modification of free-volume defects in the GaS2–Ga2S3–CsCl glasses
Modification of free-volume positron trap** defects in the GaS 2 –Ga 2 S 3 –CsCl chalcogenide glasses was studied using positron annihilation lifetime...
-
Influence of Sm3+ doped β-Ga2O3 thin films on structural, optical, and photoluminescence properties
The pure and Sm-doped (1, 3, and 5 at%) β -Ga 2 O 3 thin films were deposited on a glass substrate using the sol–gel spin coating method and investigated...
-
Effect of sintering atmosphere on structural, luminescence and electrical properties of β-Ga2O3 ceramics
The effect of the sintering atmosphere on the structural, electrical, and luminescence properties of gallium oxide ceramics was studied using X-ray...
