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1. Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiO_x (x = 1, 0.97, 0.94) thin films

   Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited on Pt/Ta/SiO ₂ /Si substrates using RF sputtering. Auger...

   Minsoo Kim, Jong Yeog Son in Journal of Materials Science

   Article 16 February 2024
   

2. Resistive random access memory characteristics of NiO, NiO_0.95, and NiO_0.95/NiO/NiO_0.95 thin films

   Resistive random access memory (RRAM) technology is receiving a lot of attention as one of the next-generation nonvolatile memory technologies with a...

   Eunmi Lee, Jong Yeog Son in Journal of the Korean Ceramic Society

   Article 22 March 2024
   

3. Forming free bipolar resistive switching in SiO_x-based flexible MIM devices

   SiO _x -based resistive switching (RS) cells composed of Cu as the active electrode were fabricated on flexible muscovite mica flakes using DC and radio...

   Biswajit Jana, Pallavi Gaur, Ayan Roy Chaudhuri in Bulletin of Materials Science

   Article 20 January 2024
   

4. Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible, low-voltage resistive switching

   Organic-inorganic halide perovskite has attracted significant interest in being switching medium for resistive random access memory (RRAM), yet the...

   Yichu Zheng, Dongfang Yu, ... Shuang Yang in Science China Materials

   Article 03 March 2023
   

5. Mimicking biological synapses with a-HfSiO_x-based memristor: implications for artificial intelligence and memory applications

   Memristors, owing to their uncomplicated structure and resemblance to biological synapses, are predicted to see increased usage in the domain of...

   Muhammad Ismail, Maria Rasheed, ... Sungjun Kim in Nano Convergence

   Article Open access 10 July 2023
   

6. Intrinsically ionic conductive nanofibrils for ultra-thin bio-memristor with low operating voltage

   Memristors integrated with low operating voltage, good stability, and environmental benignity play an important role in data storage and logical...

   Yi Zhang, Suna Fan, ... Yaopeng Zhang in Science China Materials

   Article 07 July 2022
   

7. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

   For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive...

   Muhammad Ismail, Chandreswar Mahata, ... Sungjun Kim in Nanoscale Research Letters

   Article Open access 24 June 2022
   

8. Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices

   A reliable oxide-based tungsten-doped indium-tin-oxide/tantalum oxide/titanium nitride (W-ITO/TaO _x /TiN) memristor with controllable memory states and...

   Chandreswar Mahata, Juyeong Pyo, ... Sungjun Kim in Advanced Composites and Hybrid Materials

   Article 28 July 2023
   

9. Bipolar resistive switching behavior in Pt/Zn_1−xMg_xO/pyrographite/Pt structure for memory application

   Zn _{1− x} Mg _x O thin films have been deposited on highly polished pyrographite substrates using pulsed laser deposition system in vacuum. Platinum...

   Vikas Patel, Basumati Patel, ... Andrzej Nowicki in Journal of Materials Science: Materials in Electronics

   Article 23 August 2022
   

10. Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

    Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to...

    Chandreswar Mahata, Muhammad Ismail, ... Sungjun Kim in Nanoscale Research Letters

    Article Open access 10 June 2022
    

11. Lithium-Doped Barium Titanate as Advanced Cells of ReRAMs Technology

    Resistive random-access memory (ReRAM) consists of memristor cells which are the ideal alternative to embedded flash memory technology. The...

    Nilüfer Ertekin, Sasan Rezaee in Journal of Electronic Materials

    Article 20 December 2022
    

12. Study on the modulation of sb phase change thin films and device properties by MoTe₂ heterojunction layer

    In this study, MoTe ₂ /Sb heterojunction films were fabricated through alternating deposition of MoTe ₂ and Sb materials, and their properties were...

    Yi Lu in Journal of Materials Science: Materials in Electronics

    Article 10 May 2024
    

13. Study of current conduction mechanism and resistive switching stability in the PVdF-HFP-based memristor

    The electrochemical metallization (ECM) memory using polymer materials has attracted much attention for the development of future information...

    Karthik Krishnan, Saranyan Vijayaraghavan in Journal of Materials Science: Materials in Electronics

    Article 20 January 2023
    

14. Multifilamentary switching of Cu/SiO_x memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

    Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear...

    Keonhee Kim, Jae Gwang Lim, ... Inho Kim in NPG Asia Materials

    Article Open access 15 September 2023
    

15. Enriching oxygen vacancies in hematite (α-Fe₂O₃) films with Cu impurities for resistive switching applications

    Resistive-switching memory device is a promising candidate for the quest in areas of non-volatile memory. Herein, iron (III) oxide (hematite, α-Fe ₂ O ₃ )...

    T. Susikumar, M. Navaneethan, ... P. Justin Jesuraj in Journal of Materials Science: Materials in Electronics

    Article 20 March 2024
    

16. Atomistic description of conductive bridge formation in two-dimensional material based memristor

    In-memory computing technology built on 2D material-based nonvolatile resistive switches (aka memristors) has made great progress in recent years. It...

    Sanchali Mitra, Santanu Mahapatra in npj 2D Materials and Applications

    Article Open access 27 March 2024
    

17. A SPICE compact model for forming-free, low-power graphene-insulator-graphene ReRAM technology

    Development of scalable, low-power resistive memory devices (ReRAM) can be crucial for energy efficient neural networks with enhanced...

    L. Harshit Reddy, Shubham R. Pande, ... Bhaswar Chakrabarti in Emergent Materials

    Article 30 July 2021
    

18. Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

    Investigating the promising chalcogenide materials for the development of memory and advanced neuromorphic computing applications is a critical step...

    Asif Ali, Haider Abbas, ... Jongwan Jung in Nano Research

    Article 27 September 2021
    

19. Robust Lateral Structure Memristor Based on MoS₂ Synthesized by CVD

    Memristors, as one of the most promising devices for memorizing and processing information, have attracted extensive attention. However, they are...

    Jianbiao Chen, Jiangwen Xu, ... Yan Li in Journal of Electronic Materials

    Article 04 August 2022
    

20. Forming-Free Nonfilamentary Resistive Switching in W/WO_3 – x/HFO₂/Pd Structures

    Abstract

    The resistive switching effect in W/WO _{3 –  х} /HfO ₂ /Pd structures is studied. It is shown that the switching process takes place over the...

    A. A. Koroleva, M. G. Kozodaev, ... A. M. Markeev in Nanobiotechnology Reports

    Article 01 November 2021