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Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals
We present a comprehensive investigation into the potential of n -type indium-doped cadmium selenide telluride (CST:In) as a high-performance...
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Approach to Defect-Free Lifetime and High Electron Density in CdTe
Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared...
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On the low-temperature photoluminescence and photovoltaic properties of fine-grained CdTe films
In the low-temperature ( T = 4.2 K) photoluminescence spectrum of a fine-grained (the grain size is smaller than 1 μm) obliquely sputtered CdTe thin...
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(Cd,Mn)Te Crystal Plates for Radiation Detectors: Electrical Contacts and Surface Passivation
The development of a reliable technique for making good electrical contacts to semi-insulating (Cd,Mn)Te monocrystalline plates meant for x- and...
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Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth
We used a low-temperature photoluminescence (PL) technique to investigate CdTe:In crystals after annealing in molten bismuth (Bi). The two annealed...
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On the Role of Boron in CdTe and CdZnTe Crystals
It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless,...
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Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In
Thermoelectric effect spectroscopy and photoluminescence techniques were used to study the defect levels in samples from three crystals of CdTe:In...
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Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing
(CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te...
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Photoluminescence of CdTe crystals grown by physical-vapor transport
High-quality CdTe crystals with resistivities higher than 10 8 Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and...
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High-pressure bridgman grown CdZnTe for electro-optic applications
The linear electro-optic response of high pressure Bridgman growth semi-insulating Cd 0.9 Zn 0.1 Te bulk samples has been characterized. Measurements...
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Picosecond time-resolved studies of defect-related recombination in high resistivity CdTe, CdZnTe
High resistivity CdTe:In and CdZnTe samples were studied by means of continuos and picosecond time-resolved photoluminescence (PL). Detected PL...
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Behavior of Deep Defects After Hydrogen Passivation in Znte Studied by Photoluminescence and Photoconductivity
The effects of hydrogen passivation in undoped p-ZnTe single crystals were studied by photoluminescence (PL) and photoconductivity (PC) measurements....
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Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth
The characterisation of semiconductor thin films and device structures increasingly requires the use of a variety of complementary electron...
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Broad Band Optical Power Limiting in Vanadium Doped Cd0.55Mn0 45Te Crystals
A variety of approaches have been used for optical limiting in the past [1-6].A relatively new approach, an electro-optic power limiter (EOPL) has a...
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Pl and Epr Spectroscopy of Point Defects in Detector-Grade Cd1-xZnxTe
Cadmium zinc telluride (CdZnTe) is an emerging material for room-temperature x-ray and gamma ray detectors. The identification and control of point...
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Complex Defects in Cl Doped ZnTe and CdTe
Photoluminescence and conductivity of doped with chlorine and copper ZnTe, Zn(SeTe) and CdTe are investigated. We suppose that interstitial tellurium...
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Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium
Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the...
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Control of Point Defects in Semiconductors
The prospects for localised point defect control within II-VI compound semiconductors are considered with reference to do**, thermal annealing,...
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Intelligent Control of Consolidation and Solidification Processes
Intelligent processing of materials (IPM) deals with the integration of process models and in situ sensors into an intelligent process controller to...