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1/f noise in very-long-wavelength infrared Hg1−xCdx Te detectors
This paper investigates 1/f noise performance of very-long-wavelength infrared (VLWIR) Hg 1−x Cd x Te (cutoff wavelengths λ c =15 µm and λ c =16 µm)...
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Quantum dots of InAs/GaSb type II superlattice for infrared sensing
Throughout the past years, significant progress has been made in Type II (InAs/GaSb) photovoltaic detectors in both LWIR and VLWIR ranges. BLIP...
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Current mechanisms in VLWIR Hg1−xCdxTe photodiodes
VLWIR ( c ∼15 m to 17 m at 78 K) detectors have been characterized as a function of temperature to determine the dominant current mechanisms impacting...
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MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations
A semi-empirical constraint to the thermodynamical model for growth of Hg 1−x Cd x Te (MCT) by molecular beam epitaxy is described. This constraint,...
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Large VLWIR Hg1−xCdxTe photovoltaic detectors
Very long wavelength infrared (VLWIR; 15 to 17 µm) detectors are required for remote sensing sounding applications. Infrared sounders provide...
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HgCdZnTe quaternary materials for lattice-matched two-color detectors
As the number of bands and the complexity of HgCdTe multicolor structures increases, it is desirable to minimize the lattice mismatch at growth...
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Fundamental physics of infrared detector materials
The fundamental parameters of IR photon detection are discussed relevant to the meaningful comparison of a wide range of proposed IR detecting...
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Advances in composition control for 16 µm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60K
With good composition control in both p-type cap and n-type base LPE layers, it is possible to make barrier-free two-layer P-on-n HgCdTe...
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MBE growth and characterization of in situ arsenic doped HgCdTe
We report the results of in situ arsenic do** by molecular beam epitaxy using an elemental arsenic source. Single Hg 1−x Cd x Te layers of x ∼0.3 were...
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VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications
The molecular beam epitaxy (MBE) growth technology is inherently flexible in its ability to change the Hg 1−x Cd x Te material’s bandgap within a growth...
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Improving material characteristics and reproducibility of MBE HgCdTe
This paper describes our progress to improve the material quality, reproducibility, and flexibility of molecular beam epitaxial (MBE) growth of...
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Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band
The first report of molecular beam epitaxial growth and performance of HgCdTe two-color detectors for the simultaneous detection of radiation at 4.1...
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MBE Growth and Properties of HgCdTe Long Wave and Very Long Wave Infrared Detectors
In-situ doped p-on-n devices were grown by molecular beam epitaxy, and their structural, optical and electrical properties were evaluated....
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Numerical simulation of HgCdTe detector characteristics
We discuss analytic and numerical models for HgCdTe photodiodes and present examples of their application. Analytic models can account for the...
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Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility status
Extensive material, device, and focal plane array (FPA) reproducibility data are presented to demonstrate significant advances made in the molecular...
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HgCdTe molecular beam epitaxy technology: A focus on material properties
HgCdTe MBE technology is becoming a mature growth technology for flexible manufacturing of short-wave, medium-wave, long-wave, and very long-wave...
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Electron cyclotron resonance plasma etching of HgTe-CdTe superlattices grown by photo-assisted molecular beam epitaxy
In order to form HgTe-CdTe superlattice diode arrays, a well-controlled etch process must be developed to form mesa structures on HgTe-CdTe...
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Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and hg pressure: Tuning of p on n double layer heterojunction diode properties
Arsenic diffusion coefficients were measured in HgCdTe alloy films at 375,400, and 425°C. The diffusion coefficients displayed a strong dependence on...
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Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm
We are develo** two-layer LPE P-on-n HgCdTe photovoltaic detector arrays with cutoff wavelengths out to 17 μm for a NASA spaceborne infrared...
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Hall effect characterization of LPE HgCdTe P/n heterojunctions
The field and temperature dependence of the Hall coefficient has been used to simultaneously extract information about the p and n layers in very...