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  1. Improving catalytic performance of (Ba, Ca) (Ti, Sn)O3 piezoelectric ceramics by regulating phase structure

    Piezocatalysis is considered as an evolving technology based on the piezoelectric properties of catalysts, has shown great potential in the field of...

    ** Peng, Litao Tan, ... Chan Zheng in Journal of Materials Science: Materials in Electronics
    Article 11 July 2024

  2. Improved multiferroic and magnetodielectric properties in Ni and Fe co-doped barium strontium titanate ceramics

    In this research work, the room-temperature multiferroic behavior resulting from the inclusion of transition metal ions (Ni 2+ and Fe 3+ ) in lead-free ...

    Arbaz Reyaz Khan, Rahul Goel, ... Sanjeev Kumar in Journal of Materials Science: Materials in Electronics
    Article 11 July 2024

  3. Empirical Molecular Dynamics: Possibilities, Requirements, and Limitations

    Classical molecular dynamics enables atomistic structure simulations of nanoscopic systems to be made. The method is extremely powerful in solving...
    Kurt Scheerschmidt in Theory of Defects in Semiconductors
    Chapter

  4. Light Induced Effects in Amorphous and Glassy Solids

    In this Chapter, we discuss how exposure to light can affect the properties of disordered materials and review our recent computational studies of...
    S. I. Simdyankin, S. R. Elliott in Theory of Defects in Semiconductors
    Chapter

  5. Multiscale Modeling of Defectsin Semiconductors:A Novel Molecular-Dynamics Scheme

    Now that the modeling of simple semiconductor systems has become reliable, accurate and routine, attention is focusing on larger scale, more complex...
    Gábor Csányi, Gianpietro Moras, ... Alessandro De Vita in Theory of Defects in Semiconductors
    Chapter

  6. Defect Theory: An Armchair History

    This introductory chapter begins with a summary of the developments of the theory of defects in semiconductors in the past 50 years. This is followed...
    David A. Drabold, Stefan K. Estreicher in Theory of Defects in Semiconductors
    Chapter

  7. Dynamical Matrices and Free Energies

    The calculation of the entire dynamical matrix of a periodic supercell (containing a defect or not) provides several most useful pieces of...
    Stefan K. Estreicher, Mahdi Sanati in Theory of Defects in Semiconductors
    Chapter

  8. Supercell Methods for Defect Calculations

    Periodic boundary conditions enable fast density-functional-based calculations for defects and their complexes in semiconductors. Such calculations...
    Risto M. Nieminen in Theory of Defects in Semiconductors
    Chapter

  9. Defects in Amorphous Semiconductors: Amorphous Silicon

    Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between...
    D.A. Drabold, T.A. Abtew in Theory of Defects in Semiconductors
    Chapter

  10. Charge Transport and Catalysis by Molecules Confined in Polymeric Materialsand Application to Future Nanodevices for Energy Conversion

    Polymeric materials confining functional molecules are one of the most promising materials for designing nanodevices for energy conversion, e.g.,...
    Masayuki Yagi, Masao Kaneko in Emissive Materials Nanomaterials
    Chapter

  11. Quasiparticle Calculations for Point Defects at Semiconductor Surfaces

    We present a quantitative parameter-free method for calculating defect states and charge-transition levels of point defects in semiconductors. It...
    Arno Schindlmayr, Matthias Scheffler in Theory of Defects in Semiconductors
    Chapter

  12. Spontaneous Emission from Semiconductors After Ultrafast Pulse Excitation: Theory and Simulation

    In this chapter, we review the recent progress in the theoretical description of ultrafast phenomena in the spontaneous emission of pulse-excited...
    Karsten Hannewald, Stephan Glutsch, Friedhelm Bechstedt in Ultrafast Dynamical Processes in Semiconductors
    Chapter

  13. Ultrafast Scanning Tunneling Microscopy: Principles and Applications

    The growing field of nanotechnology requires special tools capable of probing ultrafast surface dynamics on atomic scales in order to unveil...
    Dzmitry A. Yarotski, Antoinette J. Taylor in Ultrafast Dynamical Processes in Semiconductors
    Chapter

  14. The Sputtering Technique

    In this chapter, the formation of ferroelectric films using the sputtering technique is described. A main topic is a mass production system...
    Koukou Suu in Ferroelectric Random Access Memories
    Chapter

  15. Terahertz Radiation from Semiconductors

    We provide a review of the different schemes for generating terahertz (THz) radiation using photoconductive emitters excited by femtosecond...
    Jie Shan, Tony F. Heinz in Ultrafast Dynamical Processes in Semiconductors
    Chapter

  16. Novel Si-Substituted Ferroelectric Films

    In this chapter, properties of novel Si-substituted ferroelectric films are presented. The films are a solid solution between Bi...
    Takeshi Kijima, Hiroshi Ishiwara in Ferroelectric Random Access Memories
    Chapter

  17. Overview

    A review on ferroelectric thin films used for nonvolatile random access memories is given. Particular attention is paid to fundamental...
    James F. Scott in Ferroelectric Random Access Memories
    Chapter

  18. Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM

    A capacitor-on-metal/via-stacked-plug (CMVP) memory cell was developed for the 0.25 micr meter CMOS logic embedded FeRAM. Using a 445 C MOCVD...
    Hiromitsu Hada, Kazushi Amanuma, ... Takemitsu Kunio in Ferroelectric Random Access Memories
    Chapter

  19. The Application of FeRAM to Future Information Technology World

    The future information technology world needs a simple identification and secure information storage medium. The advanced smart card is a...
    Shoichi Masui, Shunsuke Fueki, ... Shoichiro Kawashima in Ferroelectric Random Access Memories
    Chapter

  20. High-Density Integration

    Ferroelectric random access memory (FeRAM) has been pursued as a promising new memory due to its ideal memory properties, such as fast random...
    Kinam Kim in Ferroelectric Random Access Memories
    Chapter
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