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1. Simulation of Thickness-Dependent Polarization Switching in Ferroelectric Thin Films Using COMSOL Multiphysics

   Ferroelectric thin films are promising materials actively used in various devices based on polarization switching. This paper is devoted to the...

   L. I. Moroz, E. M. Veselova, A. G. Maslovskaya in SMART Automatics and Energy

   Conference paper 2022
   

2. Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide

   Abstract

   Demonstrated the influence of buffer layers of group IVB oxides on the electrophysical characteristics of ferroelectric memory storage...

   A. A. Reznik, A. A. Rezvanov, S. S. Zyuzin in Russian Microelectronics

   Article 01 December 2023
   

3. Simulation of Impact of CH3NH3PbI3 Based Thin Film Transistor Polarization

   The ferroelectric memory using ferroelectric field effect transistors as the basic unit has received more and more attention because of the...

   **anrong Mao, Qiuhong Tan, ... Jiyu Zhao in 3D Imaging Technologies—Multidimensional Signal Processing and Deep Learning

   Conference paper 2021
   

4. Novel Gadolinium (Gd) and Chromium (Cr) Co-Doped Yttrium Iron Garnet (Y₃Fe₅O₁₂) Nanoparticles

   In this study, gadolinium (Gd) and chromium (Cr) co-doped yttrium iron garnet (Y ₃ Fe ₅ O ₁₂ ) nanoparticles were prepared by the sol–gel method. The X-ray...

   M. N. Hossain, M. M. Rhaman, ... M. A. Hakim in Arabian Journal for Science and Engineering

   Article 03 February 2024
   

5. High Energy-Storage Performance Under Low Electric Fields and Excellent Temperature Stability of KF-Modified BNT-ST-AN Relaxor Ferroelectric Ceramics

   Homogeneous 0.722(Bi _0.5 Na _0.5 TiO ₃ )-0.228(SrTiO ₃ )-0.05(AgNbO ₃ ) (BNT-ST-AN) ceramics with various amounts of potassium fluoride addition were prepared...

   Chittakorn Kornphom, Kamonporn Saenkam, Theerachai Bongkarn in JOM

   Article 30 August 2022
   

6. Strain Gradient Finite Element Formulation of Flexoelectricity in Ferroelectric Material Based on Phase-Field Method

   Flexoelectricity is a two-way coupling effect between the strain gradient and electric field that exists in all dielectrics, regardless of point...

   Shuai Wang, Hengchang Su, ... Li-Hua Shao in Acta Mechanica Solida Sinica

   Article 26 April 2024
   

7. Influence of Ga Do** on Multiferroic Behaviour of Modified BiMnO₃-BaTiO₃ Ceramics

   The influence of Ga ³⁺ ion do** on the multiferroic properties of BiMnO ₃ -BaTiO ₃ ceramic with a general formula of 50BiMn _(1-x) Ga _x O ₃ -50BaTiO ₃ ...

   Khushbu K. Rahangdale, Subhas Ganguly in Journal of The Institution of Engineers (India): Series D

   Article 17 September 2021
   

8. Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide

   To develop low-power, non-volatile computing-in-memory device using ferroelectric transistor technologies, ferroelectric channel materials with...

   Tilo H. Yang, Bor-Wei Liang, ... Yann-Wen Lan in Nature Electronics

   Article 30 November 2023
   

9. Investigations on the Multiferroic Properties of Lead Free BNT-BCTS:MFO Ceramic Composites Fabricated by the Solid-State Combustion Technique

   New composite ceramics with high magnetoelectric coupling coefficient (α _E ) of lead-free 0.93(Bi _0.5 Na _0.5 TiO ₃ )-0.07(Ba _0.945 Ca _0.055 Ti _0.91 Sn _0.09 O ₃ ):MgFe ₂ O

   C. Kornphom, K. Saenkam, ... T. Bongkarn in JOM

   Article 01 May 2023
   

10. MH Loop and PE Loop Study for Ni Substitution in Perovskite Bismuth Ferrite

    Perovskite phase bismuth ferrites substituted with nickel (BFNO) were fabricated using Sol Gel Method. The compositional formula being BiFe _{1− x} Ni _x O ₃ ...

    Daniel Cliff Gonmei, Ibetombi Soibam in Iranian Journal of Science

    Article 30 May 2024
    

11. Influence of Al2O3 Oxide Layer Thickness Variation on PZT Ferroelectric Al0.3Ga0.7N/AlN/GaN E-Mode GR-MOSHEMT

    The dielectric oxide Al2O3 induced gate recessed PZT ferroelectric Al0.3Ga0.7N/AlN/GaN MOSHEMT device behavior with different oxide thicknesses is...

    Abdul Naim Khan, S. N. Mishra, ... G. Chatterjee in HEMT Technology and Applications

    Chapter 2023
    

12. Structure and Electric Properties of Ba (Ti, Zr)O3 Thin Films Using Sol–gel Method

    BaTiO3 (BT) and Ba(Zr0.15Ti0.85)O3 (BZT15) thin films grown on Pt/Ti/SiO2/Si(100) substrates were made up of Sol–gel method. The BZT thin films with...

    Ling Huang, Bo Zheng, Qian Wang in Recent Advances in Materials and Manufacturing Technology

    Conference paper 2023
    

13. Polarization of Cosmic Microwave Background

    David M. Feldbaum in Gravitational Waves: An Overview

    Chapter 2020
    

14. Corrosion Studies on AA7075-T7352 Alloys Under Adverse Environments

    The stress corrosion cracking (SCC) resistance of AA7075-T7352 aluminum alloy is critically examined in this study to analyze its failure under...

    N. R. Karthik Varma, Neeraj K. Namboodiri, ... K. Manoj Kumar in Advances in Micro and Nano Manufacturing and Surface Engineering

    Conference paper 2023
    

15. Electrical Properties of the PVDF-Lead-Free Ceramic-Based Composite Film for Sensor Applications

    The ceramic-polymer composites were prepared by mixing 0.7Bi(Fe0.98Ga0.02)O3-0.3BaTiO3 (BFBTO) and poly(vinylidene fluoride) (PVDF), taken at various...

    Basanta K. Panigrahi, Varsha Purohit, ... S. K. M. Ali in Green Technology for Smart City and Society

    Conference paper 2021
    

16. Effect of Stress on Ferroelectric, Energy Storage and Harvesting Properties of 0.4BZT-0.6BCT Ceramics

    In the present work, the effect of uniaxial stress on ferroelectric properties, energy storage and harvesting is studied for the...

    Nishchay Saurabh, Satyanarayan Patel in Intelligent Manufacturing and Energy Sustainability

    Conference paper 2022
    

17. Enhanced Electrocaloric Effect in Lead Zirconate Titanate Ceramic Wafer

    The present study reports application of lead zirconate titanate (PZT) wafer, prepared by tape casting route, for enhanced electrocaloric effect,...

    Ankit Kumar Singh, Partha Sarathi Mondal in Journal of The Institution of Engineers (India): Series D

    Article 31 March 2022
    

18. Temperature dependence of the mechanical and electrical properties of soft-doped lead zirconate titanate under compression and impact

    Compared to a quasistatic environment, the electromechanical response of piezoelectric ceramics exhibits a considerably nonlinear behavior when...

    RuiZhi Wang, ZhiQiang Wang, ... YaFei Han in Science China Technological Sciences

    Article 30 October 2023

19. Multi-element B-site substituted perovskite ferroelectrics exhibit enhanced electrocaloric effect

    Electrocaloric (EC) refrigeration holds the promise to achieve next-generation refrigeration technology that can be efficiently powered by...

    FeiHong Du, ZhiWu Song, ... **aoShi Qian in Science China Technological Sciences

    Article 01 March 2023

20. A scalable ferroelectric non-volatile memory operating at 600 °C

    Non-volatile memory devices that can operate reliably at high temperature are required for the development of extreme environment electronics....

    Dhiren K. Pradhan, David C. Moore, ... Deep Jariwala in Nature Electronics

    Article 29 April 2024