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Recent Advancement in TFET-Based Biosensor Addressing Technique and Outcome: A Review
Biosensor devices have mostly been implemented in the medical field to detect and identify tumors, various infections and their toxins, quick cancer...
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Introduction
At the time, when I started writing this book, the iPhone 13 series was being launched. And the most striking thing, for me as a researcher, is that...
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Design and Analysis of Non-uniform Body with Dual Material FET-Based Digital Inverter
The paper reports design and analysis of the non-uniform body with dual material TFET-based digital inverter. The analysis includes the transient...
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Design and Temperature Analysis of Si0.8Ge0.2-Based Extended Gate Gate-All-Around TFET
In this paper, extended gate Gate-All-Around Tunnel FET (EG-GAA-TFET) is designed. Various temperatures like 300, 400, and 500 K are used for...
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Implementation of a Boolean function with a double-gate vertical TFET (DGVTFET) using numerical simulations
Tunnel field-effect transistors (TFETs) have been explored extensively as a possible substitute for MOSFETs, especially for digital system design...
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Programmable graded do** for reconfigurable molybdenum ditelluride devices
Non-volatile reconfigurable devices have the potential to improve integration levels and lower power consumption in next-generation electronics....
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Influences on Langmuir Probe Measurements by an ECR Thruster with Magnetic Nozzle
Ensuring reliability in the measurement and interpretation of plasma diagnostics is essential for characterizing thruster concepts in the growing...
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A genetic algorithm to optimize the performance of the tunneling field-effect transistor
The double-gate tunneling field-effect transistor (DGTFET) is investigated with two channel lengths (50 and 20 nm), along with the effect of the...
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Analysis of the Dependence of the Maximum Power of Silicon Heterojunction Solar Cells on the Parameters of the Crystalline Substrate
AbstractA new method for calculating the maximum power of silicon heterojunction thin-film solar cells with crystalline substrates is proposed. The...
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Performance Evaluation of Double-Gate Tunnel Field-Effect Transistor with Germanium Epitaxial Layer
In this study, a double-gate tunnel field-effect transistor with germanium epitaxial tunnel layer (Ge ETL-DGTFET) combining line tunneling...
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Transverse dielectric and lateral channel band engineering of drain-side and source-side injection in Ge-based charge-trap** memory cells for energy-efficient applications
Ge is an attractive alternative to replace Si as the body material for scaled CMOS technologies. This work comprehensively investigates hot-electron...
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Effect of Metallic Strip Deposition Within the Source Dielectric with Applied Double Metallic Drain for Enhanced DC/RF Behavior of Charge Plasma TFET for Low-Power IOT Applications
Wide tunneling barrier is always aAslam, Mohammed hurdle to achieve acceptable electrical behavior for charge plasma TFET. Poor tunneling rate of...
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Ambipolar leakage suppression in electron–hole bilayer TFET: investigation and analysis
In this paper, we propose and simulate two new structures of electron–hole bilayer tunnel field-effect transistors (EHBTFET). The proposed devices...
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Electrostatic Do** and Devices
Electrostatic do**Electrostatic do** is widely emerging as an alternative approach to overcome the limitations of traditional chemical...
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Preliminaries
The previous chapter presented an introduction to the emerging reconfigurable nanotechnologies and the related challenges associated with enabling...
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Performance Estimation of Different Tunnel Field Effect Transistor Based Biosensors Used in the Biomedical and Its Future Prospective
Using mathematical analysis, a comparative evaluation of several types of biosensors constructed using field impact semiconductor (FET) is conducted....
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Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-κ Al2O3 Gate Dielectric: DC and RF Analysis
Steep subthreshold slope and high current on–off ratio are among the major challenges of tunnel field-effect transistors (TFETs) for low-power...
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Implementation of L-Shaped Dielectric Double Metal Dual-Gate TFET Toward Improved Performance Characteristics and Reduced Ambipolarity
In this work, we have proposed an L-shaped Dielectric Double Metal Dual-Gate TFET, which has been experimentally demonstrated and investigated for...
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One-Dimensional Steady-State Drift–Diffusion Model of Perovskite Solar Cell
PerovskitePerovskite solarSolar cell is well known emerging photovoltaicPhotovoltaic technology that has the advantage of rapid efficiencies but has...