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Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide
Bilayer transition metal dichalcogenides (TMDs) balance the high mobility of single layers with the high state density of multilayers and therefore...
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Re-initialization-Free Level Set Method via Molecular Beam Epitaxy Equation Regularization for Image Segmentation
Variational level set method has become a powerful tool in image segmentation due to its ability to handle complex topological changes and maintain...
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Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor
Introducing magnetic order into topological insulator (TI) to break the time-reversal symmetry can yield numerous fascinating physical phenomena,...
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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices....
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Semiconductor Manufacturing
We’ve followed the journey of a new chip from high-level system architecture through a mosaic of concurrent design steps and subprocesses and are...
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FEM Modeling of Thermal Aspect of Dielectric Inserted Under Source & Drain of 5 nm Nanosheet
Nanoscale device design beyond 20 nm technology nodes constrain material thermal conductivity and exacerbates the self-heating phenomenon in...
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Toward monolithic growth integration of nanowire electronics in 3D architecture: a review
Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent electrostatic control capability, are widely regarded as advantageous...
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Growth Features of 3C-SiC/Si Films Fabricated by HTCVD
AbstractThis work is devoted to the study of the morphology and structure of 3C-SiC/Si films obtained by the high-temperature chemical vapor...
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From lab to fab: path forward for 2D material electronics
The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic...
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Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate
This study proposed and fabricated a β -Ga 2 O 3 SBD-based rectifier with embedded microchannels in a ceramic substrate for active cooling for the first...
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Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition
In summary, our study has achieved successful growth of a ferroelectric Al 0.65 Sc 0.35 N film using the PVD method. The fabricated capacitors have...
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Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor
Surface acoustic wave (SAW) resonators with an ultrahigh Q-factor are designed and fabricated on silicon-based gallium nitride (GaN/Si). The...
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High-speed optoelectronic devices
High-speed optoelectronic devices are key components of modern fiber communication systems, and the backbone of information technology. In this...
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Fabrication, Optimization and Testing of Photoconductively Tuned SAW Device Using CBD Method
In this paper, we explained the fabrication process of tunable surface acoustic wave (SAW) device. We have also demonstrated the photoconductivity of...
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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method
The etching process of high-performance recessed-gate InAlN/GaN high-electron mobility transistors (HEMTs) has been actively researched. This paper...
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Two-dimensional materials for future information technology: status and prospects
Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the...