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Silicon Material Based Tunnel FET for Controlling Ambipolar Current
This paper highlights the reduction in ambipolar current by controlling various parameters for gate-drain overlapped structure of nanoscale TFET. In...
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Methods to Reduce Ambipolar Current of Various TFET Structures: a Review
As far as miniaturization of devices are being continue in semiconductor market, there are alternative option has been discovered by the researcher....
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Suppression of Ambipolar Current in Enhanced Gate Based Schottky Barrier CNTFET Using Ant Lion Optimization
In the recent past, due to ballistic transport capability, carbon nanotube field-effect transistors (CNTFETs) have emerged as a potential replacement...
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Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review
Ambipolar behaviour is the cloud that surrounds the desired nanoelectronics device, the carbon nanotube field effect transistor (CNTFET). Despite all...
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Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current
In this brief, we explored the impact of drain pocket (DP) along with heterogenous gate dielectric (HD) on the performance of double gate tunnel...
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Fluoro-substituted DPP-bisthiophene conjugated polymer with azides in the side chains as ambipolar semiconductor and photoresist
Photoresists are essential for the fabrication of flexible electronics through all-photolithographic processes. Single component semiconducting...
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Ant Lion Optimizer for Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors
A mathematical model for the effect of oxide thickness on ambient conduction is provided in the Schottky Barrier Carbon Nanotubes (CNTs) Field Effect...
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Dual Metal Gate Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With Reduction in Ambipolar Current
In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar ) of Dielectric Engineered (DE) Dopant Segregated (DG) Schottky...
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Physics & Modeling of Ambipolar Snapback Behavior in Gate Grounded NMOS
This paper models first snapback ambipolar action in NMOS, when subjected to high current stress across the drain terminal. We analyze 2 − D ...
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Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs, inverters and frequency doublers
Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified...
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Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement
In this paper, a dual dielectric drain—dual dielectric gate hetero-structure Si 0.2 Ge 0.8 /GaAs charge plasma-based junctionless TFET (DDD-DDG-HJLTFET)...
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Ambipolar Field Effect Transistor Based on ZnO/Anthracene Nanocomposite As an Active Single Layer for Balanced Hole and Electron Mobility
AbstractIn this work, the study of ZnO/anthracene nanocomposite (deposited on the SiO 2 /Si substrate) as an active layer for a field effect...
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Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction
In this paper, a dielectric modulated dual material gate TFET (DM-DMG_TFET)based biosensor is proposed. In order to detect various biomolecules, a...
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Improved Electron Transport in Ambipolar Organic Field-Effect Transistors with PMMA/Polyurethane Blend Dielectrics
We report improved electron transport in solution-processed ambipolar organic field-effect transistors (OFETs) employing polymer dielectric blends of...
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Suppression of Ambipolar Behavior and Simultaneous Improvement in RF Performance of Gate-Overlap Tunnel Field Effect Transistor (GOTFET) Devices
This paper investigates a method to suppress the ambipolar current I a m b effectively, enhance the device performance with higher on current I o n , lower...
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Analytical Modeling for a New Structure of Dielectric Pocket-Based Dual Material Double Gate TFET with Gate Oxide Stack
In this paper, a new structure of dielectric pocket-gate oxide stack dual material double gate tunnel FET (DP-GOS-DMDG TFET) is proposed and its...
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Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET
In this study, we present an ambipolar conduction and RF stability performance for a Germanium Source Dual Halo Dual Dielectric Triple Material...
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Thiazoloisoindigo-based Polymer Semiconductors: Synthesis, Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance
Develo** new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein, we synthesized two new...
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Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
Tunnel FETs (TFETs) need to meet certain conditions to be useful for analog/RF circuit applications, including a steep subthreshold slope, high...
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Impact of Drain Thickness Asymmetry on DC and Analog/RF Performance of an n-type SiGe/Si Double Gate TFET
This paper suggests an n-type tunnel field effect transistor (TFET) with asymmetric architecture. The asymmetry is considered in terms of reduced...