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  1. No Access

    Article

    Multi-site occupancies of Dy3+ in Ca3Gd(AlO)3(BO3)4 and their optical thermometric applications

    Lanthanide-doped Ca3Ln(AlO)3(BO3)4 phosphors are adopted for numerous new types of applications with outstanding optical properties. Herein, the novel Ca3Gd(AlO)3(BO3)4:Dy3+ phosphors were synthesized by the high...

    Zhiqi Ye, Zhiyuan Cheng, Tong Liu, Tian Shi… in Journal of Materials Science: Materials in… (2022)

  2. No Access

    Article

    The single‐band red upconversion emission of Er3+ in YbOCl layered structure

    The single-band red upconversion (UC) emission of lanthanide-doped materials have attracted attention due to its great potential for versatile applications. In this work, YbOCl:xEr3+ with super pure red UC emissi...

    Menghan Shen, Zhiyuan Cheng, Yong** Li… in Journal of Materials Science: Materials in… (2021)

  3. No Access

    Article

    Influence of Eu3+ concentration on photoluminescence and structure of Ba3Y1 − zEuz(BO3)3

    A series of Ba3Y1 − zEuz(BO3)3 has been synthesized via a conventional solid state method. XRD, SEM, FL, EDS and lifetime decay curves were utilized for characterization. XRD and SEM confirmed that the phase of s...

    Zhiyuan Cheng, Yanjie Zhang, **gjie Yu… in Journal of Materials Science: Materials in… (2018)

  4. No Access

    Article

    Synthesis, structure and photoluminescence properties of (Sr,Ca)AlSiN3:Eu2+ phosphor for white light emitting diodes with controllable optical performance

    A series of SryCa1−x−yAlSiN3:xEu2+ (x = 0–0.01, y = 0–0.8) phosphors have been successfully prepared by solid state reaction under atmospheric pressure. All the phosphors exhibit orthorhombic crystal structure si...

    Yanjie Zhang, Han Zhang, Peipei Dong… in Journal of Materials Science: Materials in… (2017)

  5. No Access

    Article

    Relaxed silicon-germanium on insulator substrate by layer transfer

    The fabrication of 4 in, relaxed Si1−xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1−xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCV...

    Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie… in Journal of Electronic Materials (2001)