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    Relaxed silicon-germanium on insulator substrate by layer transfer

    The fabrication of 4 in, relaxed Si1−xGex-on-insulator (SGOI) substrates by layer transfer was demonstrated. A high-quality relaxed Si1−xGex layer was grown using ultrahigh vacuum chemical vapor deposition (UHVCV...

    Zhiyuan Cheng, Gianni Taraschi, Matthew T. Currie… in Journal of Electronic Materials (2001)