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  1. No Access

    Article

    An efficient micromixer combining oscillatory flow and divergent circular chambers

    Oscillatory/pulsatile flow is an important approach for mixing enhancement at micro scales. Here we report a micromixer that consists of a microfluidic oscillator and divergent chambers. The oscillator autonom...

    J. W. Wu, H. M. **a, Y. Y. Zhang, S. F. Zhao, P. Zhu… in Microsystem Technologies (2019)

  2. No Access

    Article

    Improvement of nucleation and electrical properties of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films with an upper Bi4Ti3O12 buffer layer

    A highly (117)-preferred Bi3.15Nd0.85Ti2.99Mn0.01O12 (BNTM) thin film with an upper Bi4Ti3O12 (BTO) buffer layer was fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by a sol–gel method. The effects of the added ...

    W. L. Zhang, M. H. Tang, Y. **ong, Z. P. Wang… in Journal of Sol-Gel Science and Technology (2016)

  3. No Access

    Article

    Investigation of wax and paper materials for the fabrication of paper-based microfluidic devices

    Paper-based microfluidic devices hold great potential in today’s microfluidic applications. They offer low costs, simple and quick fabrication processes, ease of uses, etc. In this work, several wax and paper ...

    Z. W. Zhong, Z. P. Wang, G. X. D. Huang in Microsystem Technologies (2012)

  4. No Access

    Article

    Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

    We have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on (ZnSe)30(ZnSe0.92Te0.08)30(Z...

    Z. P. Wang, Z. X. Liu, H. X. Han, J. Q. Zhang, G. H. Li… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Raman Scattering and Photoluminescence of Spontaneously Ordered Ga0.5In0.5P Alloy

    Samples of the spontaneously ordered Ga0.5In0.5P alloys were grown by the MOCVD method on [001]-oriented GaAs substrates. The thickness of the epitaxal layer is about 2 μm. Raman scattering and photoluminescence ...

    G. H. Li, Z. X. Liu, H. X. Han, Z. P. Wang, J. R. Dong… in MRS Online Proceedings Library (1996)

  6. No Access

    Article

    Photoluminescence and Raman Scattering from (CdSe)m(ZnSe)n-ZnSe Multiple Quantum Wells under Hydrostatic Pressure

    The photoluminescence and Raman scattering of {[(CdSe)1(ZnSe)3]14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations hav...

    J.Q. Zhang, Z.X. Liu, Z.P. Wang, H.X. Han, G.H. Li… in MRS Online Proceedings Library (1995)

  7. No Access

    Article

    Raman Scattering from [(CdSe)m(ZnSe)n]p-ZnSe Quantum Wells

    Raman scattering from a (CdSe)m(ZnSe)n-ZnSe strained quantum well structure, composed of (CdSe)m(ZnSe)n as well layers and thick ZnSe as barrier layers, is presented in this report. Two kinds of ZnSe-like LO phon...

    Z. P. Wang, H. X. Han, Z. X. Liu, W. T. Qin, Z. L. Peng… in MRS Online Proceedings Library (1993)