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    Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

    We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition r...

    A. Kosarev, A. Torres, Y. Hernandez, R. Ambrosio… in Journal of Materials Research (2006)