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Article
Transmission Electron Microscopy Characterization of Ni(V) Metallization Stressed Under High Current Density in Flip Chip Solder Joints
The Ni(V) under bump metallization (UBM) in flip chip solder joints is known to be consumed in a two-stage process during current stressing. The Ni(V) UBM transforms first to the “consumed Ni(V)” state. Then, ...
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Article
Fundamental Study of the Intermixing of 95Pb-5Sn High-Lead Solder Bumps and 37Pb-63Sn Pre-Solder on Chip-Carrier Substrates
This study investigated the intermixing of 95Pb-5Sn solder bumps and 37Pb-63Sn pre-solder in flip-chip solder joints. The reaction conditions included multiple reflows (up to ten) at 240°C, whereby previously ...
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Article
Effect of Sn concentration on massive spalling in high-Pb soldering reaction with Cu substrate
The massive spalling of Cu3Sn in the soldering reaction between high-Pb solders and Cu substrates was studied to identify the mechanism behind this rather interesting and frequently observed phenomenon. Four diff...
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Article
Tin Whisker Growth Induced by High Electron Current Density
The effect of electric current on the tin whisker growth on Sn stripes was studied. The Sn stripes, 1 μm in thickness, were patterned on silicon wafers. The design of the Sn stripes allowed the simultaneous study...
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Article
Effect of UBM Thickness on the Mean Time to Failure of Flip-Chip Solder Joints under Electromigration
Flip-chip solder joints with Cu/Ni/Al underbump metallurgy (UBM) on the chip and an Au/Ni surface finish on the substrate were studied under current stressing at an ambient temperature of 150°C. Three differen...
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Article
Pronounced electromigration of Cu in molten Sn-based solders
The high local temperature in flip-chip solder joints of microprocessors has raised concerns that the solder, a low melting temperature alloy, might locally liquefy and consequently cause failure of the microp...
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Article
Effects of limited cu supply on soldering reactions between SnAgCu and Ni
The volume difference between the various types of solder joints in electronic devices can be enormous. For example, the volume difference between a 760-µm ball grid array solder joint and a 75-µm flip-chip so...
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Article
Strain Relief in InxGa1-xAs/GaAs Multiple Layer Systems
In a recent paper[l] we presented the notion of a “critical composition” of InxGa1-xAs (x=0.18) which when exceeded results in threading dislocation evolution in InxGa1-xAs (x ≥ 0.18) material grown on GaAs. For ...