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Open AccessElectronic inhomogeneity and phase fluctuation in one-unit-cell FeSe films
One-unit-cell FeSe films on SrTiO3 substrates are of great interest owing to significantly enlarged pairing gaps characterized by two coherence peaks at ±10 meV and ±20 meV. In-situ transport measurement is desir...
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Open AccessOrigin of charge transfer and enhanced electron–phonon coupling in single unit-cell FeSe films on SrTiO3
Interface charge transfer and electron–phonon coupling have been suggested to play a crucial role in the recently discovered high-temperature superconductivity of single unit-cell FeSe films on SrTiO3. However, t...
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Open AccessEnhanced electron dephasing in three-dimensional topological insulators
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to...
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Dichotomy of the electronic structure and superconductivity between single-layer and double-layer FeSe/SrTiO3 films
The latest discovery of possible high-temperature superconductivity in the single-layer FeSe film grown on a SrTiO3 substrate has generated much attention. Initial work found that, while the single-layer FeSe/SrT...
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Electrically tuned magnetic order and magnetoresistance in a topological insulator
The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magne...
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Open AccessHigh temperature superconducting FeSe films on SrTiO3 substrates
Interface enhanced superconductivity at two dimensional limit has become one of most intriguing research directions in condensed matter physics. Here, we report the superconducting properties of ultra-thin FeS...
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Open AccessCrossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level ...
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Open AccessQuantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction
Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surf...
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Open AccessDemonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure
In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 1...
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Electronic origin of high-temperature superconductivity in single-layer FeSe superconductor
The recent discovery of high-temperature superconductivity in iron-based compounds has attracted much attention. How to further increase the superconducting transition temperature (Tc) and how to understand the s...
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Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators
Topological insulators (TIs) are quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The most challenging problem faced by current investigation...