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  1. No Access

    Article

    Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

    Titanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply o...

    Jae-Sik Min, Hyung-Sang Park, Wonyong Koh, Sang-Won Kang in MRS Online Proceedings Library (1999)

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    Article

    Atomic Layer Deposition of Ta2O5 Films Using Ta(OC2H5)5 and Nh3

    Tantalum oxide films were grown by chemical vapor deposition using an alternating supply of tantalum pentaethoxide and ammonia. The supply of one source was followed by a purge with argon gas before introducin...

    Hyun-Jung Song, Wonyong Koh, Sang-Won Kang in MRS Online Proceedings Library (1999)

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    Article

    Single Source CVD of LiAlO2

    We successfully deposited LiAlO2 films on Si substrates at 400-600 °C by single source chemical vapor deposition using a heterometallic compound, Li(OiPr)2Al(CH3)2, which contains Li, Al, and O at the same 1:1:2 ...

    Wonyong Koh, Su-** Ku, Yunsoo Kim in MRS Online Proceedings Library (1997)