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Article
Luminescent and structural properties of ZnO-Ag films
ZnO-Ag thin films were prepared by a two-stage method on glass and sapphire substrates. Ag do** was carried out by a method of close space sublimation at atmospheric pressure. The film thickness is varied fr...
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Article
The nature of white luminescence in SiO2:C layers
Silicon oxide layers containing incorporated carbon (SiO2:C) have been obtained by sequential thermal carbonization/oxidation of porous silicon. The as-synthesized SiO2:C layers exhibit intense white photolumines...
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Article
Effect of do** on properties of Zno:Cu and Zno:Ag thin films
ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method t...
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Article
The influence of vacuum annealing temperature on the fundamental absorption edge and structural relaxation of a-SiC:H films
The effect of vacuum annealing temperature on the characteristics of the fundamental absorption edge and short-range order reconstruction in amorphous hydrogenated silicon carbide (a-SiC:H) films obtained by magn...
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Chapter and Conference Paper
Comparative Study of Near Stochiometric a-SiC:H and a-SiC Films: Effect of the Bonded Hydrogen
Amorphous silicon carbon films having near stochiometric composition had been deposited by (i) reactive magnetron sputtering of silicon target in argon-methane gas mixture (a-SiC:H films) and (ii) ion-plasma d...