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  1. No Access

    Article

    A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

    A search for materials suitable for implementation of 1.55 µm Al-free diode lasers based on InP with asymmetric barrier (AB) layers is conducted. It is shown that a very high (over 106) suppression ratio of the p...

    F. I. Zubov, M. E. Muretova, L. V. Asryan, E. S. Semenova, M. V. Maximov… in Semiconductors (2018)

  2. No Access

    Article

    Spatial hole burning and spectral stability of a quantum-dot laser

    The inhomogeneous intensity distribution of the optical model along the axis of a semiconductor quantum-dot laser results in spatial hole burning. The influence of this phenomenon on the stability of the multi...

    A. V. Savelyev, V. V. Korenev, M. V. Maximov, A. E. Zhukov in Semiconductors (2015)

  3. No Access

    Article

    Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in q...

    V. V. Korenev, A. V. Savelyev, A. E. Zhukov, A. V. Omelchenko… in Semiconductors (2013)

  4. No Access

    Article

    Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

    Heat dissipation under the high-speed modulation of quantum dot edge-emitting lasers is considered. It is shown that, for a given laser diode, there is a bias current at which the heat-to-bitrate ratio is mini...

    A. E. Zhukov, A. V. Savelyev, M. V. Maximov, N. V. Kryzhanovskaya… in Semiconductors (2013)

  5. No Access

    Article

    Effect of active-region modulation do** on simultaneous ground-state and excited-state lasing in quantum-dot lasers

    The lasing spectra and light-power characteristics of lasers based on InAs/InGaAs quantum dots with p-type modulation do** are studied over a broad range of pump currents. It is shown that p-type do** leads t...

    Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Savelyev… in Semiconductors (2012)

  6. No Access

    Article

    Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser

    Analytical expressions for the shape and width of the lasing spectra of a quantum-dot (QD) laser in the case of a small (in comparison with the spectrum width) homogeneous broadening of the QD energy levels ha...

    V. V. Korenev, A. V. Savelyev, A. E. Zhukov, A. V. Omelchenko… in Semiconductors (2012)