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Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

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    Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

    GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron con...

    U. Birkle, M. Fehrer, V. Kirchner… in MRS Internet Journal of Nitride Semiconduc… (1999)

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