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  1. No Access

    Chapter

    Field Dependence of Time-To-Breakdown Distribution of Thin Oxides

    The accurate prediction of thin insulator reliability is of significant importance to the development of MOS VLSI technologies. In most reliability studies1,5, the time-to-failure tbd and/or the total injected ch...

    P. Olivo, Thao N. Nguyen, B. Ricco in The Physics and Technology of Amorphous SiO2 (1988)

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    Article

    High Quality 100 Å Thermal Oxide

    The growth of high quality 100 Å thermal oxide is investigated. Different growth conditions including oxidation temperature, oxidation rate, and gas ambient are explored and they all produce good oxides. Howev...

    Thao N. Nguyen, Dawn L. Quinlan in MRS Online Proceedings Library (1986)