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    Localization of Hydrogen in B and in Doped Silicon by ion Channeling and PAC

    The lattice site of H/D atoms in silicon doped with B and 111In atoms is investigated using the ion channeling and perturbed "yr angular correlation (PAC) technique. The results indicate that at 295 K the antibon...

    Th. Wichert, H. Skudlik, H.-D. Carstanjen, T. Enders… in MRS Online Proceedings Library (1987)