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    Simulation of retarded diffusion of antimony and enhanced diffusion of phosphorus in silicon

    The paper is concerned with the influence of point defects on dopant diffusion in silicon. This influence is analysed by means of comparing the experimental results of Mizuo and Higuchi with our simulation. Th...

    T. Brabec, E. Guerrero, M. Budil, H. W. Poetzl in Zeitschrift für Physik B Condensed Matter (1987)