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    Article

    Investigation of high concentration effects of Sb and P in silicon by combination of SIMS and TEM

    The combination of SIMS, electrical resistance measurements and TEM was used for investigation of “high concentration effects” of Sb and P in silicon. For antimony implantation and annealing combined with and ...

    G. Stingeder, P. Pongratz, W. Kuhnert… in Fresenius' Zeitschrift für analytische Che… (1989)

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    Article

    Simulation of retarded diffusion of antimony and enhanced diffusion of phosphorus in silicon

    The paper is concerned with the influence of point defects on dopant diffusion in silicon. This influence is analysed by means of comparing the experimental results of Mizuo and Higuchi with our simulation. Th...

    T. Brabec, E. Guerrero, M. Budil, H. W. Poetzl in Zeitschrift für Physik B Condensed Matter (1987)