Skip to main content

and
  1. No Access

    Article

    The growth characteristics of chemical vapour-deposited β-SiC on a graphite substrate by the SiCl4/C3H8/H2 system

    Silicon carbide has been grown at 1300–1800°C by chemical vapour deposition using the SiCl4/C3H8/H2 system on a graphite substrate. The effect of C3H8 flow rate and deposition temperature on the growth characteri...

    T. T. Lin, M. H. Hon in Journal of Materials Science (1995)

  2. No Access

    Article

    Electron irradiation effects on oxidized Nb foil and NbO

    Auger electron spectroscopy was used to study electron irradiation damage on niobium oxide. With the co-existence of O-2p and Nb-4d states in the valence band, the splitting of the MNN-type Auger transition pe...

    T. T. Lin, David Lichtman in Journal of Materials Science (1979)