Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
The growth characteristics of chemical vapour-deposited β-SiC on a graphite substrate by the SiCl4/C3H8/H2 system
Silicon carbide has been grown at 1300–1800°C by chemical vapour deposition using the SiCl4/C3H8/H2 system on a graphite substrate. The effect of C3H8 flow rate and deposition temperature on the growth characteri...
-
Article
Electron irradiation effects on oxidized Nb foil and NbO
Auger electron spectroscopy was used to study electron irradiation damage on niobium oxide. With the co-existence of O-2p and Nb-4d states in the valence band, the splitting of the MNN-type Auger transition pe...