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    Article

    Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors

    ZnSnO thin-film transistors (TFTs) were fabricated by pulsed laser deposition in different oxygen partial pressures. It is found that the oxygen vacancy (VO) contents in ZnSnO films can be readily modified by the...

    Jiaqi Zhang, Jianguo Lu, Yangdan Lu, Shilu Yue, Rongkai Lu, **feng Li in Applied Physics A (2019)

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    Article

    Ultra-thin-film transistors based on ultra-thin amorphous ZnSnO films

    Ultra-thin amorphous ZnSnO (a-ZTO) films were deposited by pulsed laser deposition at room temperature and annealed at various temperatures for ultra-thin-film transistors (UTFTs). The thicknesses of the ultra-th...

    Shilu Yue, Jianguo Lu, Rongkai Lu, Siqin Li, Bo**g Lu, **feng Li in Applied Physics A (2018)