Page
%P
-
Article
Ultra-thin-film transistors based on ultra-thin amorphous ZnSnO films
Ultra-thin amorphous ZnSnO (a-ZTO) films were deposited by pulsed laser deposition at room temperature and annealed at various temperatures for ultra-thin-film transistors (UTFTs). The thicknesses of the ultra-th...
-
Article
Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors
ZnSnO thin-film transistors (TFTs) were fabricated by pulsed laser deposition in different oxygen partial pressures. It is found that the oxygen vacancy (VO) contents in ZnSnO films can be readily modified by the...