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  1. No Access

    Article

    Effect of Ni silicide density on electrical performance of silicide-induced crystallized polycrystalline silicon thin-film transistors

    The electrical performance of low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) fabricated by silicide-induced crystallization (SIC) is greatly affected by metal contamination such as...

    Chang Woo Byun, A. Mallikarjuna Reddy, Se Wan Son… in Electronic Materials Letters (2012)

  2. No Access

    Article

    Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

    A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We in...

    Seung Jae Yun, Yong Woo Lee, Se Wan Son, Chang Woo Byun… in Electronic Materials Letters (2012)

  3. Article

    Erratum to: Do** Effect on the Metal-induced Lateral Crystallization Rate

    Gui Fu Yang, Yong Woo Lee, Chang Woo Byun, Se Wan Son… in Electronic Materials Letters (2012)

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    Article

    Effect of LDD structure on electrical properties of polysilicon n-TFT prepared by metal-induced lateral crystallization

    It is known that MILC polysilicon thin-film transistors (TFTs) show excellent electrical properties except for a relatively high leakage current. In this work, a lightly doped drain structure (LDD) was prepare...

    Se Wan Son, Chang Woo Byun, Yong Woo Lee, Seung Jae Yun… in Electronic Materials Letters (2012)

  5. No Access

    Article

    High performance low temperature polycrystalline Si thin-film transistors fabricated by silicide seed-induced lateral crystallization

    A novel and simple crystallization method for high performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using Ni silicide seed-induced lateral crystallization (SILC) was proposed in this ...

    Chang Woo Byun, Se Wan Son, Yong Woo Lee, Seung Ki Joo in Electronic Materials Letters (2012)

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    Article

    Gettering of Ni silicide to minimize the leakage current in metal-induced crystallized polycrystalline silicon thin-film transistors

    Metal-induced lateral crystallization (MILC) technology has been regarded as the only alternative for low temperature polycrystalline silicon (poly-Si) since it became apparent that laser technology still had ...

    Chang Woo Byun, Se Wan Son, Yong Woo Lee, Hyun Mo Kang… in Electronic Materials Letters (2012)

  7. No Access

    Article

    Do** effect on the metal-induced lateral crystallization rate

    The effects of phosphorus do** and boron do** on the metal-induced lateral crystallization (MILC) rate have been studied. In the case of phosphorus do**, the MILC rate is very sensitive to the sequence o...

    Gui Fu Yang, Yong Woo Lee, Chang Woo Byun, Se Wan Son… in Electronic Materials Letters (2012)

  8. No Access

    Article

    High performance poly-Si thin film transistors fabricated by self-aligned seed induced lateral crystallization

    In this study, a low temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) was fabricated by self-aligned silicide seed induced lateral crystallization (SA-SILC). In comparison with a self-alig...

    Chang Woo Byun, Se Wan Son, Yong Woo Lee, Seung Jae Yun… in Electronic Materials Letters (2011)