-
Article
Computer Analysis of AFM Images of a Silicon Surface Implanted with Zinc Ions and Oxidized at Elevated Temperatures
A computer study of the morphological characteristics of the AFM image of a self-organized system of surface hillocks in CZ n-Si (100) samples doped with zinc under conditions of hot implantation and oxidized at ...
-
Article
Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation
50 keV 64Zn+ ions to a dose of 5 × 1016 cm–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV 132Xe26+ ions with a fluence ranging f...
-
Article
Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon
The presented results characterize nanoparticle formation in n-Si(100) samples implanted with 50-keV 64Zn+ ions (the dose is 5 × 1016 cm‒2) at room temperature followed by heat treatment in an oxygen or nitrogen ...
-
Article
The effect of silicon-substrate orientation on the local piezoelectric characteristics of LiNbO3 films
The domain structure of lithium-niobate thin films grown on Si(111) and Si(100) substrates coated with a native oxide layer with a thickness of no less than 2 nm is investigated by X-ray diffraction, scanning ...
-
Article
Structure of Si near-surface layer after 64Zn+ ion implantation at elevated temperature
The results of studying the structure and composition of the surface layer of a Si plate after 64Zn+ ion implantation and thermal annealing in oxygen are presented. The ions are implanted into a substrate heated ...