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Article
Hydrogenated amorphous silicon germanium by Hot Wire CVD as an alternative for microcrystalline silicon in tandem and triple junction solar cells
We study hydrogenated amorphous silicon germanium (a-SiGe:H) deposited by HWCVD for the use as low band gap absorber in multijunction junction solar cells. We deposited layers with Tauc optical band gaps of 1....
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Article
Influence of the composition on the electrical properties of (Mn2.1−xNi0.9Six)O4 negative temperature coefficient thermistors
The influence of the composition on the electrical properties of (Mn2.1−x Ni0.9Si x )O4 (0≤x≤0.18) negative temperature coefficient (NTC) thermistors was studied. Major phases pr...
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Article
Blue-emitting CaS:Cu,F phosphor fabricated by thermal incorporation of Cu and F into ALD-grown CaS thin film
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Article
The Role of Sulfur During Mo Etching Using SF6 and Cl2 Gas Chemistries
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Article
A study on the neck-in process by flow-forming
The neck-in process is developed to produce very small and thin cylindrical elements by flow forming machine. In this study, neck-in process is applied to the production of thin-walled combustion tube. The pur...
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Article
Comparison of TiN films produced by TDEAT (Ti[N(C2H5)2]4), TDMAT (Ti[N(CH3)2]4), and a new precursor TEMAT (Ti[N(CH3)C2H5]4)
TiN films have been deposited by chemical vapor deposition (CVD) from a new TiN precursor, tetrakis(ethylmethylamino)titanium (TEMAT), and compared with those from tetrakis(diethylamino)titanium (TDEAT) and te...